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FDZ2554PFAIRCHILN/a1700avaiDual P-Channel 2.5V Specified PowerTrench BGA MOSFET
FDZ2554PFAIRCHILDN/a1692avaiDual P-Channel 2.5V Specified PowerTrench BGA MOSFET


FDZ2554P ,Dual P-Channel 2.5V Specified PowerTrench BGA MOSFETApplications• Outstanding thermal transfer characteristics:• Battery managementsignificantly better ..
FDZ2554P ,Dual P-Channel 2.5V Specified PowerTrench BGA MOSFETFeaturesCombining Fairchild’s advanced 2.5V specified• –6.5 A, –20 V. R = 28 mΩ @ V = –4.5 VDS(ON) ..
FDZ291P ,P-Channel 1.5 V Specified PowerTrench BGA MOSFETApplications • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Battery m ..
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FDZ2554P
Dual P-Channel 2.5V Specified PowerTrench BGA MOSFET
FDZ2554P F2554 May 2002 FDZ2554P Ò Ò Dual P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified · –6.5 A, –20 V. R = 28 mW @ V = –4.5 V DS(ON) GS PowerTrench process with state-of-the-art BGA R = 45 mW @ V = –2.5 V DS(ON) GS packaging, the FDZ2554P minimizes both PCB space and R . This dual BGA MOSFET embodies a DS(ON) 2 · Occupies only 0.10 cm of PCB area: breakthrough in packaging technology which enables the device to combine excellent thermal transfer 1/3 the area of SO-8 characteristics, high current handling capability, ultra- low profile packaging, low gate charge, and low R . DS(ON) · Ultra-thin package: less than 0.70 mm height when mounted to PCB Applications · Outstanding thermal transfer characteristics: · Battery management significantly better than SO-8 · Load switch · Battery protection · Ultra-low Q x R figure-of-merit g DS(ON) · High power and current handling capability D D D S Pin 1 S S S G Q2 Q1 G S S S S S D Q1 G S S Q2 Pin 1 D D D G Top Bottom S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±12 ID Drain Current – Continuous (Note 1a) –6.5 A – Pulsed –20 P Power Dissipation (Steady State) (Note 1a) 2.1 W D TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 60 °C/W qJA Thermal Resistance, Junction-to-Ambient (Note 1b) 108 R °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 8 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2554P FDZ2554P 7’’ 12mm 3000 units Ó2002 FDZ2554P Rev. C (W)
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