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FDZ206P
P-Channel 2.5V Specified PowerTrench BGA MOSFET
FDZ206P F206P January 2002 FDZ206P Ò Ò P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified · –13 A, –20 V. R = 9.5 mW @ V = –4.5 V DS(ON) GS PowerTrench process with state of the art BGA RDS(ON) = 14.5 mW @ V GS = –2.5 V packaging, the FDZ206P minimizes both PCB space and R . This BGA MOSFET embodies a DS(ON) 2 · Occupies only 14 mm of PCB area. breakthrough in packaging technology which enables Only 42% of the area of SO-8 the device to combine excellent thermal transfer characteristics, high current handling capability, ultra- · Ultra-thin package: less than 0.76 mm height when low profile packaging, low gate charge, and low R . DS(ON) mounted to PCB Applications · 0.65 mm ball pitch 2 · Battery management · 3.5 x 4 mm footprint · Load switch · High power and current handling capability · Battery protection S Pin 1 D D D D D D D S S S S D G D S S S S D D S S S S D D G S S S D Pin 1 D Bottom Top o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±12 I Drain Current – Continuous (Note 1a) –13 A D – Pulsed –60 P Power Dissipation (Steady State) (Note 1a) 2.2 W D TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 56 RqJA °C/W Thermal Resistance, Junction-to-Ball (Note 1) 4.5 R qJB Thermal Resistance, Junction-to-Case (Note 1) 0.6 R qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 206P FDZ206P 13” 12mm 3000 Ó2002 FDZ206P Rev. D(W)
