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FDZ202PFAIRCHILDN/a2921avaiP-Channel 2.5V Specified PowerTrench BGA MOSFET


FDZ202P ,P-Channel 2.5V Specified PowerTrench BGA MOSFETApplications • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Battery m ..
FDZ203N ,N-Channel 2.5V Specified PowerTrench ?BGA MOSFETApplications• Ultra-low Q x R figure-of-merit.g DS(ON)• Battery management• High power and current ..
FDZ204P ,P-Channel 2.5V Specified PowerTrench BGA MOSFETFeatures Combining Fairchild’s advanced 2.5V specified • –4.5 A, –20 V. R = 45 mΩ @ V = –4.5 V DS(O ..
FDZ206P ,P-Channel 2.5V Specified PowerTrench BGA MOSFETFeatures Combining Fairchild’s advanced 2.5V specified • –13 A, –20 V. R = 9.5 mΩ @ V = –4.5 V DS(O ..
FDZ208P ,P-Channel 30 Volt PowerTrench BGA MOSFETApplications • 3.5 x 4 mm footprint • Battery management • High power and current handling capabil ..
FDZ209N ,60V N-Channel PowerTrench BGA MOSFETApplications · Outstanding thermal transfer characteristics: 4 times better than SSOT-6 · Solenoid ..
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FDZ202P
P-Channel 2.5V Specified PowerTrench BGA MOSFET
FDZ202P F202 July 2002 FDZ202P     P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified • –5.5 A, –20 V. R = 45 mΩ @ V = –4.5 V DS(ON) GS PowerTrench process with state of the art BGA R = 75 mΩ @ V = –2.5 V DS(ON) GS packaging, the FDZ202P minimizes both PCB space and R . This BGA MOSFET embodies a DS(ON) 2 • Occupies only 5 mm of PCB area: only 55% of the breakthrough in packaging technology which enables area of SSOT-6 the device to combine excellent thermal transfer characteristics, high current handling capability, ultra- • Ultra-thin package: less than 0.70 mm height when low profile packaging, low gate charge, and low R . DS(ON) mounted to PCB Applications • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Battery management • Ultra-low Q x R figure-of-merit • Load switch g DS(ON) • Battery protection • High power and current handling capability S D D D Pin 1 S S S G G S S Pin 1 D D D D Bottom Top o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ±12 V GSS I Drain Current – Continuous (Note 1a) –5.5 A D – Pulsed –20 P Power Dissipation (Steady State) (Note 1a) 2 W D T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 64 R °C/W θJA Thermal Resistance, Junction-to-Ball (Note 1) 8 R °C/W θJB R Thermal Resistance, Junction-to-Case (Note 1) 0.7 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 202P FDZ202P 7’’ 8mm 3000 units 2002 FDZ202P Rev. D(W)
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