FDZ193P ,-20V P-Channel 1.7V PowerTrench?WL-CSP MOSFETGeneral Description®Designed on Fairchild's advanced 1.7V PowerTrench process Max r = 90m: at V = ..
fdz197pz ,-20V P-Channel 1.5V Specified PowerTrench?Thin WL-CSP MOSFETApplications Ultra-thin package: less than 0.65 mm height when mounted to PCB Battery management ..
FDZ202P ,P-Channel 2.5V Specified PowerTrench BGA MOSFETApplications • Outstanding thermal transfer characteristics: 4 times better than SSOT-6 • Battery m ..
FDZ203N ,N-Channel 2.5V Specified PowerTrench ?BGA MOSFETApplications• Ultra-low Q x R figure-of-merit.g DS(ON)• Battery management• High power and current ..
FDZ204P ,P-Channel 2.5V Specified PowerTrench BGA MOSFETFeatures Combining Fairchild’s advanced 2.5V specified • –4.5 A, –20 V. R = 45 mΩ @ V = –4.5 V DS(O ..
FDZ206P ,P-Channel 2.5V Specified PowerTrench BGA MOSFETFeatures Combining Fairchild’s advanced 2.5V specified • –13 A, –20 V. R = 9.5 mΩ @ V = –4.5 V DS(O ..
FS3KM-9 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS3KMA-5A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS3UM-18A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS401LF , PC to TV Video Scan Converters
FS40SM-5 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS40SM-5 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDZ193P
-20V P-Channel 1.7V PowerTrench?WL-CSP MOSFET
® P-Channel 1.7V PowerTrench WL-CSP MOSFET June 2009 FDZ193P tm ® P-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90m: Features General Description ® Designed on Fairchild's advanced 1.7V PowerTrench process Max r = 90m: at V = -4.5V, I = -1A DS(on) GS D with state of the art "low pitch" WLCSP packaging process, the Max r = 130m: at V = -2.5V, I = -1A DS(on) GS D FDZ193P minimizes both PCB space and r . This advanced DS(on) WLCSP MOSFET embodies a breakthrough in packaging Max r = 300m: at V = -1.7V, I = -1A DS(on) GS D technology which enables the device to combine excellent 2 Occupies only 1.5 mm of PCB area Less than 50% of the thermal transfer characteristics, ultra-low profile packaging, low area of 2 x 2 BGA gate charge, and low r . DS(on) Ultra-thin package: less than 0.65 mm height when mounted Application to PCB Battery management RoHS Compliant Load switch Battery protection PIN 1 PIN 1 S S G S S D G D D BOTTOM TOP MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -20 V DS V Gate to Source Voltage ±12 V GS I Drain Current -Continuous (Note 1a) -3 D A -Pulsed -15 Power Dissipation (Note 1a) 1.9 P W D Power Dissipation (Note 1b) 0.9 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 65 TJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 133 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 2 FDZ193P WL-CSP 7’’ 8mm 5000 units ©2009 1 FDZ193P Rev.C2 (W)
