FDW6923 ,P-Channel 2.5V Specified PowerTrench MOSFET with Schottky DiodeFeatures This P-Channel 2.5V specified MOSFET is a rugged • –3.5 A, –20 V. R = 0.045 Ω @ V = –4.5 ..
FDW9926 ,Dual N-Channel 2.5V Specified PowerTrench MOSFETApplications GSS• Battery protection• High performance trench technology for extremelylow R• Load s ..
FDW9926A ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeatures This N -Channel 2.5V specified MOSFET is a rugged • 4.5 A, 20 V. R = 32 mΩ @ V = 4.5 V DS( ..
FDW9926NZ ,20V Common Drain N-Channel 2.5V Specified PowerTrench MOSFETApplicationslow R @ V = 2.5 VDS(ON) GS• Battery protection• Low profile TSSOP-8 package• Load switc ..
FDY100PZ ,-20V Single P-Channel (- 2.5V) Specified PowerTrench?MOSFETÒ Ò Ò ÒFDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench MOSFET January 2006 FDY100PZ ..
FDY101PZ ,-20V Single P-Channel (-2.5V) Specified PowerTrench?MOSFETApplications • ESD protection diode (note 3) • Li-Ion Battery Pack • RoHS ..
FS35R12YT3 , IGBT-modules
FS35R12YT3 , IGBT-modules
FS35R12YT3 , IGBT-modules
FS3KM-9 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS3KMA-5A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS3UM-18A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDW6923
P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode
FDW6923 A G A S A S D C May 2002 FDW6923 P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged • –3.5 A, –20 V. R = 0.045 Ω @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor’s advanced R = 0.075 Ω @ V = –2.5 V DS(ON) GS PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the • V < 0.55 V @ 1 A MOSFET, providing a compact power solution for F asynchronous DC/DC converter applications. • High performance trench technology for extremely Applications low R DS(ON) • DC/DC conversion • Low profile TSSOP-8 package 5 4 6 3 7 2 8 1 TSSOP-8 Pin 1 o MOSFET Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage V DSS –20 V Gate-Source Voltage ± 12 V GSS I Drain Current – Continuous (Note 1) A D –3.5 – Pulsed –30 MOSFET Power Dissipation (minimum pad) (Note 1) 1.2 P W D Schottky Power Dissipation (minimum pad) (Note 1) 1.0 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Schottky Maximum Ratings V Repetitive Peak Reverse Voltage 20 V RRM I Average Forward Current 1.5 A F IFM Peak Forward Current 30 A Thermal Characteristics R Thermal Resistance, Junction-to-Ambient MOSFET: 115 °C/W θJA (minimum pad) (Note 1) Schottky: 130 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 6923 FDW6923 13’’ 16mm 3000 units FDW6923 Rev. D(W) 2002 Fairchild Semiconductor International
