FDW264P ,P-Channel 2.5V Specified PowerTrench MOSFETApplications • Low gate charge • Load switch • High performance trench technology for extremely • M ..
FDW6923 ,P-Channel 2.5V Specified PowerTrench MOSFET with Schottky DiodeFeatures This P-Channel 2.5V specified MOSFET is a rugged • –3.5 A, –20 V. R = 0.045 Ω @ V = –4.5 ..
FDW9926 ,Dual N-Channel 2.5V Specified PowerTrench MOSFETApplications GSS• Battery protection• High performance trench technology for extremelylow R• Load s ..
FDW9926A ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeatures This N -Channel 2.5V specified MOSFET is a rugged • 4.5 A, 20 V. R = 32 mΩ @ V = 4.5 V DS( ..
FDW9926NZ ,20V Common Drain N-Channel 2.5V Specified PowerTrench MOSFETApplicationslow R @ V = 2.5 VDS(ON) GS• Battery protection• Low profile TSSOP-8 package• Load switc ..
FDY100PZ ,-20V Single P-Channel (- 2.5V) Specified PowerTrench?MOSFETÒ Ò Ò ÒFDY100PZ Single P-Channel (– 2.5V) Specified PowerTrench MOSFET January 2006 FDY100PZ ..
FS35R12YT3 , IGBT-modules
FS35R12YT3 , IGBT-modules
FS35R12YT3 , IGBT-modules
FS3KM-9 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS3KMA-5A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS3UM-18A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDW264P
P-Channel 2.5V Specified PowerTrench MOSFET
FDW264P G D S S S S D D November 2003 FDW264P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged • –9.7 A, –20 V. R = 10.0 mΩ @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor’s advanced R = 14.5 mΩ @ V = –2.5 V DS(ON) GS PowerTrench process. It has been optimized for power management applications with a wide range of gate • Extended V range (±12V) for battery GSS drive voltage (2.5V – 12V). applications Applications • Low gate charge • Load switch • High performance trench technology for extremely • Motor drive low R DS(ON) • DC/DC conversion • Power management • Low profile TSSOP-8 package 5 4 6 3 7 2 TSSOP-8 8 1 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage ± 12 V GSS I Drain Current – Continuous (Note 1) –9.7 A D – Pulsed –50 P Power Dissipation (Note 1a) 1.3 W D (Note 1b) 0.6 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 96 °C/W θJA (Note 1b) 208 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 264P FDW264P 13’’ 16mm 3000 units FDW264P Rev. C (W) 2003
