FDW256P ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –8 A, –30 V R = 13.5 mΩ @ V = –10 V DS ..
FDW258P ,P-Channel 1.8V Specified PowerTrench MOSFETApplications • Low gate charge • Load switch • High performance trench technology for extremely • M ..
FDW262P ,20V P-Channel PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET is produced • –4.5 A, –20 V. R = 47 mΩ @ V = –4.5 V ..
FDW262P_NL ,20V P-Channel PowerTrench MOSFETApplications • Low gate charge (13nC typical) • Power management • High performance trench technolo ..
FDW264P ,P-Channel 2.5V Specified PowerTrench MOSFETApplications • Low gate charge • Load switch • High performance trench technology for extremely • M ..
FDW6923 ,P-Channel 2.5V Specified PowerTrench MOSFET with Schottky DiodeFeatures This P-Channel 2.5V specified MOSFET is a rugged • –3.5 A, –20 V. R = 0.045 Ω @ V = –4.5 ..
FS35R12YT3 , IGBT-modules
FS35R12YT3 , IGBT-modules
FS35R12YT3 , IGBT-modules
FS3KM-9 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS3KMA-5A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS3UM-18A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDW256P
30V P-Channel PowerTrench MOSFET
FDW256P D G S S S S D D May 2001 FDW256P Ò Ò 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of · –8 A, –30 V R = 13.5 mW @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench RDS(ON) = 20 mW @ V GS = –4.5 V process. It has been optimized for power management applications requiring a wide range of gave drive · Extended V range (±25V) for battery applications GSS voltage ratings (4.5V – 25V). · High performance trench technology for extremely Applications low R DS(ON) · Battery protection · Low profile TSSOP-8 package · DC/DC conversion · Power management · Load switch 5 4 6 3 7 2 8 1 TSSOP-8 Pin 1 o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage ± 25 V GSS ID Drain Current – Continuous (Note 1) –8 A – Pulsed –50 PD Power Dissipation (Note 1a) 1.3 W (Note 1b) 0.6 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 96 °C/W (Note 1b) 208 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 256P FDW256P 13’’ 16mm 3000 units Ó2001 FDW256P Rev C(W)
