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FDW2509NZ
Dual N-Channel 2.5V Specified PowerTrench MOSFET
G1 G2 S2S1 S1 S2 D1 D2 FDW2509NZ 2 FDW2509NZ Ò Ò - This N-Channel 2.5V specified MOSFET is a rugged · 7.1 A, 20 V. R = 20 mW @ V = 4.5 V gate version of Fairchild's Semiconductor’s advanced R = mW @ V = 2.5 V PowerTrench process. It has been optimized for power management applications with a wide range of gate · Extended V range ( ±12V) for battery applications drive voltage (2.5V – 12V). · ESD protection diode (note 3) · -Ion Battery Pack · High performance trench technology for extremely DS(ON) · Low profile TSSOP-8 package TSSOP-8 Pin 1 o T=25C unless otherwise noted A Ratings Units V Drain-Source Voltage V V -Source Voltage ± I Drain Current – Continuous A D – Pulsed P Power Dissipation for Single Operation 6 W D (Note 1 T, T Operating and Storage Junction Temperature Range –55 to +150 J°C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient °C/W q Device Marking Reel Size Tape width Quantity 9NZ FDW2509NZ 12mm 3000 units B Ó2 200 (W) Rev FDW2509NZ 13’’250 Device Package Marking and Ordering Information 114 (Note 1b) JA 77(Note 1a) STG 1.1 b) 1.(Note 1a) 30 7.1(Note 1a) 12GSS Gate DSS 20 ParameterSymbol Absolute Maximum Ratings low R Li Applications GSS GSDS(ON) 26 GSDS(ON) FeaturesGeneral Description MOSFETChannel 2.5V Specified PowerTrenchDual N 200May
