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FDW2508PB
Dual P-Channel -1.8V Specific Power Trench® MOSFET -12V, -6A, 18mOhms
® FDW2508PB Dual P-Channel –1.8V Specified PowerTrench MOSFET October 2006 FDW2508PB ® Dual P-Channel –1.8V Specified PowerTrench MOSFET –12V, –6A, 18mΩ Features General Description This P-Channel –1.8V specified MOSFET uses Fairchild Max r = 18mΩ at V = –4.5V, I = –6A DS(on) GS D ® Semiconductor’s advanced low voltage PowerTrench . It has Max r = 22mΩ at V = –2.5V, I = –5A DS(on) GS D been optimized for battery power management applications. Max r = 30mΩ at V = –1.8V, I = –4A DS(on) GS D Low gate charge High performance trench technology for extremely low r DS(on) Application Low profile TSSOP-8 package Power management RoHS compliant Load switch Battery protection TSSOP8 Pin 1 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage –12 V DS V Gate to Source Voltage ±8 V GS Drain Current -Continuous (Note 1a) –6 I A D -Pulsed –30 Power Dissipation-Dual Operation 2 P 1.6 W Power Dissipation-Single Operation (Note 1a) D (Note 1b) 1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 80 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 125 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 2508PB FDW2508PB TSSOP-8 13’’ 12mm 2500 units 1 ©2006 FDW2508PB Rev.B
