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FDW2507NZFSCN/a545avaiDual N-Channel 2.5V specified PowerTrench MOSFET


FDW2507NZ ,Dual N-Channel 2.5V specified PowerTrench MOSFETFeaturesThis dual N-Channel MOSFET has been designed• 7.5 A, 20 V R = 19 mΩ @ V = 4.5 VDS(ON) GSus ..
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FDW2507NZ
Dual N-Channel 2.5V specified PowerTrench MOSFET
FDW2507NZ D G2 D S2 D G1 D S1 October 2001 FDW2507NZ     Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed • 7.5 A, 20 V R = 19 mΩ @ V = 4.5 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 23 mΩ @ V = 2.5 V DS(ON) GS PowerTrench process to optimize the R @ V = DS(ON) GS 2.5v on special TSSOP-8 lead frame with all the drains • Isolated source and drain pins on one side of the package. • ESD protection diode (note 3) Applications • Li-Ion Battery Pack • High performance trench technology for extremely low R @ V = 2.5 V DS(ON) GS • Low profile TSSOP-8 package 1 8 2 7 3 6 TSSOP-8 Pin 1 4 5 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage ±12 V GSS I Drain Current – Continuous (Note 1a) 7.5 A D – Pulsed 30 Power Dissipation for Single Operation (Note 1a) 1.6 P W D (Note 1b) 1.1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 77 °C/W θJA Thermal Resistance, Junction-to-Ambient (Note 1b) 114 R °C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2507NZ FDW2507NZ 13’’ 12mm 3000 units 2001 FDW2507NZ Rev C
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