FDW2504P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET is a rugged • –3.8 A, –20 V, R = 0.043 Ω @ V = –4.5 ..
FDW2506P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET is a rugged• –5.3 A, –20 V, R = 0.022 Ω @ V = –4.5 ..
FDW2506P_NL ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplications• Load switch• High performance trench technology for extremelylow RDS(ON)• Motor drive ..
FDW2507N ,Dual N-Channel 2.5V specified PowerTrench MOSFETApplicationslow R @ V = 2.5 VDS(ON) GS• Li-Ion Battery Pack• Low profile TSSOP-8 package1 82 73 64 ..
FDW2507NZ ,Dual N-Channel 2.5V specified PowerTrench MOSFETFeaturesThis dual N-Channel MOSFET has been designed• 7.5 A, 20 V R = 19 mΩ @ V = 4.5 VDS(ON) GSus ..
FDW2507NZ_NL ,Common Drain N-Channel 2.5V specified PowerTrench MOSFETApplications • Li-Ion Battery Pack • High performance trench technology for extremely low R @ V = ..
FS2KM-16A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS2KM-18A , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS300R12KE3 , EconoPACK with trench/fieldstop IGBT3 and EmCon High Efficiency diode
FS300R17KE3 , EconoPACK module with trench/fieldstop IGBT and EmCon3 diode
FS30ASJ-2 , High-Speed Switching Use Nch Power MOS FET
FS30ASJ-2 , High-Speed Switching Use Nch Power MOS FET
FDW2504P
Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDW2504P G2 G1 S2 S1 S2 S1 D2 D1 May 2002 FDW2504P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged • –3.8 A, –20 V, R = 0.043 Ω @ V = –4.5 V DS(ON) GS gate version of Fairchild Semiconductor’s advanced R = 0.070 Ω @ V = –2.5 V DS(ON) GS PowerTrench process. It has been optimized for power management applications with a wide range of gate • Extended V range (±12V) for battery applications GSS drive voltage (2.5V – 12V). • Low gate charge Applications • Load switch • High performance trench technology for extremely low R DS(ON) • Motor drive • DC/DC conversion • Low profile TSSOP-8 package • Power management 1 8 2 7 3 6 4 5 TSSOP-8 Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage V DSS –20 V Gate-Source Voltage V GSS ±12 I Drain Current – Continuous (Note 1) A D –3.8 – Pulsed –30 P Power Dissipation (Note 1a) 1.0 W D (Note 1b) 0.6 T , T Operating and Storage Junction Temperature Range °C J STG –55 to +150 Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 125 °C/W θJA (Note 1b) 208 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2504P FDW2504P 13’’ 12mm 3000 units FDW2504P Rev. E (W) 2002
