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FDU8880FSCN/a820avai30V N-Channel PowerTrench MOSFET


FDU8880 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed specifically to r = 10mΩ , V = 10V, I = 35ADS(ON) ..
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FDU8880
30V N-Channel PowerTrench MOSFET
FDU8880 November 2004 FDU8880 ® N-Channel PowerTrench MOSFET 30V, 58A, 10mΩ General Description Features This N-Channel MOSFET has been designed specifically to r = 10mΩ, V = 10V, I = 35A DS(ON) GS D improve the overall efficiency of DC/DC converters using r = 13mΩ, V = 4.5V, I = 35A either synchronous or conventional switching PWM DS(ON) GS D controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low r and fast switching speed. DS(ON) r DS(ON) Low gate charge Applications High power and current handling capability • DC/DC converters D G I-PAK (TO-251AA) S G DS MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 58 A Continuous (T = 25 C, V = 10V) (Note 1) C GS o I Continuous (T = 25 C, V = 4.5V) (Note 1) 51 A D C GS o o Continuous (T = 25 C, V = 10V, with R = 52 C/W) 13 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 2) 53 mJ AS Power dissipation 55 W P D o o Derate above 25C0.37W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-251 2.73 C/W θJC o R Thermal Resistance Junction to Ambient TO-251 100 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-251, 1in copper pad area 52 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDU8880 FDU8880 TO-251AA Tube N/A 75 units FDU8880 FDU8880_NL (Note 3) TO-251AA Tube N/A 75 units ©2004 FDU8880 Rev. B2
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