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FDU6692FSCN/a279avai30V N-Channel PowerTrench MOSFET


FDU6692 ,30V N-Channel PowerTrench MOSFETApplications • High performance trench technology for extremely • DC/DC converter low R DS(ON)• M ..
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FDU6692
30V N-Channel PowerTrench MOSFET
FDD6692/FDU6692 April 2001 FDD6692/FDU6692     30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 54 A, 30 V. R = 12 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 14.5 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Low gate charge (18 nC typical) low gate charge, low RDS( ON) and fast switching speed. • Fast switching Applications • High performance trench technology for extremely • DC/DC converter low R DS(ON) • Motor drives D D G I-PAK G S (TO-251AA) D-PAK TO-252 G DS (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±16 V GSS I Drain Current – Continuous (Note 3) 54 A D – Pulsed (Note 1a) 162 P W D Power Dissipation for Single Operation (Note 1) 57 (Note 1a) 3.8 (Note 1b) 1.6 T , T Operating and Storage Junction Temperature Range -55 to +175 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 2.6 R °C/W θJC R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6692 FDD6692 D-PAK (TO-252) 13’’ 12mm 2500 units FDU6692 FDU6692 I-PAK (TO-251) Tube N/A 75 FDD/FDU6692 Rev C(W) 2001
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