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FDU6680A
30V N-Channel PowerTrench MOSFET
FDD6680A/FDU6680A January 2001 FDD6680A/FDU6680A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 56 A, 30 V R = 9.5 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 13 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Low gate charge (23nC typ.) low gate charge, low RDS( ON) , fast switching speed and extremely low R in a small package. DS(ON) • Fast Switching Applications • High performance trench technology for extremely • DC/DC converter low R DS(ON) • Motor Drives D D G I-PAK G S (TO-251AA) D-PAK TO-252 G DS (TO-252) S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Continuous Drain Current @T =25°C (Note 3) 56 A D C @T =25°C (Note 1a) 14 A Pulsed (Note 1a) 100 P Power Dissipation @T =25°C (Note 3) 60 W D C @T =25°C (Note 1a) 2.8 A @T=25°C (Note 1b) 1.3 A T , T Operating and Storage Junction Temperature Range -55 to +175 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 2.1 R °C/W θJC Thermal Resistance, Junction-to-Ambient (Note 1a) 45 R °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6680A FDD6680A D-PAK (TO-252) 13’’ 12mm 2500 units FDU6680A FDU6680A I-PAK (TO-251) Tube N/A 75 FDD6680A/FDU6680A Rev C(W) 2001 Fairchild Semiconductor Corp.
