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FDT461N
100V N-Channel Logic Level PowerTrench MOSFET
FDT461N April 2004 FDT461N ® N-Channel Logic Level PowerTrench MOSFET 100V, 0.4A, 2.5Ω Features Applications •r = 1.45Ω (Typ.), V = 4.5V, I = 0.4A • Servo Motor Load Control DS(ON) GS D •Q (tot) = 2.36nC (Typ.), V = 10V • DC-DC converters g GS • Low Miller Charge • Low Q Body Diode RR DRAIN (FLANGE) D GATE DRAIN SOURCE G D S SOT-223 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GS Drain Current o o A Continuous (T = 25 C, V = 10V, R = 110 C/W) 0.54 A GS θJA I D o o Continuous (T = 25 C, V = 4.5V, R = 110 C/W) 0.4 A A GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 6.3 mJ AS Power dissipation 1.13 W P D o o Derate above 25C9mW/ C o T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics 2 o R Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.171 in 110 C/W θJA 2 o R Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.068 in 128 C/W θJA 2 o R Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.026 in 147 C/W θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 461 FDT461N SOT-223 13” 12mm 2500 units ©2004 FDT461N Rev. A1
