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FDT458P
30V P-Channel PowerTrench MOSFET
FDT458P June 2001 FDT458P Ò Ò 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed · 3.4 A, –30 V. R = 130 mW @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC RDS(ON) = 200 mW @ V GS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery chargers. · Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable · Low gate charge (2.5 nC typical) RDS(ON) specifications. · High performance trench technology for extremely Applications low RDS(ON) · Battery chargers · High power and current handling capability in a · Motor drives widely used surface mount package D D D D S S D G S G D S SOT-223* G G SOT-223 (J23Z) o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage – 30 V V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 3.4 A D – Pulsed 10 P W D Maximum Power Dissipation (Note 1a) 3.0 (Note 1b) 1.3 (Note 1c) 1.1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W qJA RqJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 458P FDT458P 13’’ 12mm 2500 units Ó2001 FDT458P Rev. B(W)
