IC Phoenix
 
Home ›  FF11 > FDS9934C-FDS9934C_NL,20V Complementary PowerTrench MOSFET
FDS9934C-FDS9934C_NL Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
FDS9934CFSCN/a38avai20V Complementary PowerTrench MOSFET
FDS9934C_NLFAIRCHILN/a30000avai20V Complementary PowerTrench MOSFET


FDS9934C_NL ,20V Complementary PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Type Mi ..
FDS9936 ,Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description
FDS9936A ,Dual N-Channel Enhancement Mode Field Effect TransistorFeatures SO-8 N-Channel enhancement mode power field effect5.5 A, 30 V. R = 0.040 Ω @ V = 10 V, ..
FDS9936A ,Dual N-Channel Enhancement Mode Field Effect Transistorapplications such as diskused surface mount package.drive motor control, battery powered circuits w ..
FDS9945 ,60V N-Channel PowerTrench MOSFETFeatures • 3.5 A, 60 V. R = 0.100Ω @ V = 10 V DS(ON) GSThese N Channel Logic Level MOSFET have bee ..
FDS9945_NL ,60V N-Channel PowerTrench MOSFETFeatures • 3.5 A, 60 V. R = 0.100Ω @ V = 10 V DS(ON) GSThese N Channel Logic Level MOSFET have bee ..
FS10AS-3-T13 , High-Speed Switching Use Nch Power MOS FET
FS10AS-3-T13 , High-Speed Switching Use Nch Power MOS FET
FS10AS-3-T13 , High-Speed Switching Use Nch Power MOS FET
FS10ASJ-2-T13 , High-Speed Switching Use Nch Power MOS FET
FS10KM , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM-06 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE


FDS9934C-FDS9934C_NL
20V Complementary PowerTrench MOSFET
FDS9934C February 2004 FDS9934C Complementary Features These dual N- and P-Channel enhancement mode · Q1: 6.5 A, 20 V. R = 30 mW @ V = 4.5 V DS(ON) GS power field effect transistors are produced using R = 43 mW @ V = 2.5 V. DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. · Q2: –5 A, –20 V, R = 55 mW @ V = –4.5 V DS(ON) GS R = 90 mW @ V = –2.5 V DS(ON) GS These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Q2 D2 D 5 4 D2 D D1 D 3 6 D1 D Q1 7 2 G2 SO-8 S2 G 8 1 G1 S S1 S Pin 1 SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units Q1 Q2 20 –20 V Drain-Source Voltage V DSS ±12 ±10 V Gate-Source Voltage V GSS 6.5 –5 I Drain Current – Continuous (Note 1a) A D 20 –30 – Pulsed P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9934C FDS9934C 13’’ 12mm 2500 units Ó2004 FDS9934C Rev C(W)
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED