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FDS9926A_NLFairchildN/a80000avaiDual N-Channel 2.5V Specified PowerTrench MOSFET
FDS9926A_NL. |FDS9926A_NLFairchildN/a80000avaiDual N-Channel 2.5V Specified PowerTrench MOSFET
FDS9926A_NL.. |FDS9926A_NLFAIRCHILN/a27500avaiDual N-Channel 2.5V Specified PowerTrench MOSFET


FDS9926A_NL ,Dual N-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionThese N-Channel 2.5V specified MOSFETs use 6.5 A, 20 V. R = 30 mΩ @ V = 4.5 VDS( ..
FDS9926A_NL. ,Dual N-Channel 2.5V Specified PowerTrench MOSFETapplications with a wide range of gate drive voltage• Optimized for use in battery protection circu ..
FDS9926A_NL.. ,Dual N-Channel 2.5V Specified PowerTrench MOSFETApplications• Battery protection• Load switch• Power management5 4Q16 37 2Q28 1oAbsolute Maximum Ra ..
FDS9933 ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplications • Load switch • High performance trench technology for extremely low R DS(ON)• Motor ..
FDS9933_NL ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –5 A, –20 V, R = 55 mΩ @ V = –4.5 V DS ..
FDS9933A ,Dual P-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced• -3.8 A, -20 V. R = 0.075 ..
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FDS9926A_NL-FDS9926A_NL.-FDS9926A_NL..
Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDS9926A July 2003 FDS9926A Ò Dual N-Channel 2.5V Specified PowerTrench MOSFET Features General Description These N-Channel 2.5V specified MOSFETs use 6.5 A, 20 V. R = 30 mW @ V = 4.5 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R = 43 mW @ V = 2.5 V. DS(ON) GS process. It has been optimized for power management applications with a wide range of gate drive voltage · Optimized for use in battery protection circuits (2.5V – 10V). · Low gate charge Applications · Battery protection · Load switch · Power management 5 4 Q1 6 3 7 2 Q2 8 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage ±10 GSS ID Drain Current – Continuous (Note 1a) 6.5 A – Pulsed 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 40 R qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9926A FDS9926A 13’’ 12mm 2500 units Ó2003 Fairchild Semiconductor Corp. FDS9926A Rev E (W)
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