FDS8958A ,Dual N & P-Channel PowerTrench MOSFETFeatures These dual N- and P-Channel enhancement mode • Q1: N-Channel power field effect transisto ..
FDS8958A_F085 ,30V Dual N & P-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type ..
FDS8958A_NL ,Dual N & P-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Type Mi ..
FDS8962C ,30V Dual N & P-Channel PowerTrench MOSFETapplications where low in-line power R = 0.080W @ V = -4.5V loss and fast switching are require ..
FDS8962C ,30V Dual N & P-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type ..
FDS8978 ,30V N-Channel PowerTrench?MOSFETFeatures General Description r = 18mΩ, V = 10V, I = 7.5A This N-Channel MOSFET has been designed ..
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FDS8958A
Dual N & P-Channel PowerTrench MOSFET
FDS8958A January 2002 FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode • Q1: N-Channel power field effect transistors are produced using 7.0A, 30V R = 0.028Ω @ V = 10V DS(on) GS Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize R = 0.040Ω @ V = 4.5V DS(on) GS on-state ressitance and yet maintain superior switching performance. • Q2: P-Channel These devices are well suited for low voltage and -5A, -30V R = 0.052Ω @ V = -10V DS(on) GS battery powered applications where low in-line power R = 0.080Ω @ V = -4.5V loss and fast switching are required. DS(on) GS • Fast switching speed • High power and handling capability in a widely used surface mount package Q2 D2 D 5 4 D2 D D1 D 6 3 D1 D Q1 7 2 G2 SO-8 S2 G 8 1 G1 S S1 S SO-8 Pin 1 S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage V GSS ±20 ±20 I Drain Current - Continuous (Note 1a) 7 -5 A D - Pulsed 20 -20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS8958A FDS8958A 13” 12mm 2500 units FDS8958A Rev D1(W) 2002
