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FDS8958A_F085
30V Dual N & P-Channel PowerTrench?MOSFET
® FDS8958A_F085 Dual N & P-Channel PowerTrench MOSFET FDS8958A February 2010 tm FDS8958A_F085 Ò Ò Ò Ò Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode · Q1: N-Channel power field effect transistors are produced using 7.0A, 30V R = 0.028W @ V = 10V DS(on) GS Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize R = 0.040W @ V = 4.5V DS(on) GS on-state ressitance and yet maintain superior switching · Q2: P-Channel performance. -5A, -30V R = 0.052W @ V = -10V DS(on) GS These devices are well suited for low voltage and R = 0.080W @ V = -4.5V battery powered applications where low in-line power DS(on) GS loss and fast switching are required. · Fast switching speed · High power and handling capability in a widely used surface mount package Qualified to AEC Q101 · RoHS Compliant · D2 Q2 D D2 5 4 D D1 D D1 D 6 3 Q1 7 2 G2 SO-8 S2 G G1 S 8 1 S1 S SO-8 Pin 1 S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage V GSS ±20 ±20 ID Drain Current - Continuous (Note 1a) 7 -5 - Pulsed 20 -20 A P Power Dissipation for Dual Operation 2 2 D Power Dissipation for Single Operation (Note 1a) 1.6 1.6 W (Note 1c) 0.9 0.9 E Single Pulse Avalanche Energy (Note 3) 54 13 mJ AS T , T Operating and Storage Junction Temperature Range -55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS8958A FDS8958A_F085 13” 12mm 2500 units ©2010 1 FDS8958A_F085 Rev. A
