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FDS8949FAIRCHILDN/a3000avai40V Dual N-Channel Logic Level PowerTrench? MOSFET
FDS8949FAIRCHILN/a200avai40V Dual N-Channel Logic Level PowerTrench? MOSFET


FDS8949 ,40V Dual N-Channel Logic Level PowerTrench? MOSFET®FDS8949 Dual N-Channel Logic Level PowerTrench MOSFETOctober 2006FDS8949 ..
FDS8949 ,40V Dual N-Channel Logic Level PowerTrench? MOSFETGeneral DescriptionThese N-Channel Logic Level MOSFETs are produced„ Max r = 29mΩ at V = 10VDS(on) ..
FDS8949_F085 ,40V Dual N-Channel Logic Level PowerTrench? MOSFETApplications„ RoHS compliant„ Inverter„ Power suppliersD2D2D1D1G2SO-8S2G1S1Pin 1MOSFET Maximum Rati ..
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FRP2010CC. ,Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 VELI DEIHHE‘IEWI 0027636 l ICC”:i “‘43:“1":“':“:“‘“"':““““ L _ 3469674 FAIRCHILD SEMICONDUCTOR 84 ..


FDS8949
40V Dual N-Channel Logic Level PowerTrench? MOSFET
® FDS8949 Dual N-Channel Logic Level PowerTrench MOSFET October 2006 FDS8949 tm ® Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29mΩ Features General Description These N-Channel Logic Level MOSFETs are produced „ Max r = 29mΩ at V = 10V DS(on) GS using Fairchild Semiconductor’s advanced „ Max r = 36mΩ at V = 4.5V ® DS(on) GS PowerTrench process that has been especially tailored „ Low gate charge to minimize the on-state resistance and yet maintain superior switching performance. „ High performance trench technology for extremely low These devices are well suited for low voltage and r DS(on) battery powered applications where low in-line power „ High power and current handling capability loss and fast switching are required. „ RoHS compliant Applications „ Inverter „ Power suppliers D2 D2 D1 D1 G2 SO-8 S2 G1 S1 Pin 1 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Note 1a) 6 I A D -Pulsed 20 E Drain-Source Avalanche Energy (Note 3) 26 mJ AS Power Dissipation for Dual Operation 2 P 1.6 W Power Dissipation for Single Operation (Note 1a) D (Note 1b) 0.9 T , T Operating and Storage Junction Temperature Range -55 to 150 °C J STG Thermal Characteristics R Thermal Resistance-Single operation, Junction to Ambient (Note 1a) 81 θJA R Thermal Resistance-Single operation, Junction to Ambient (Note 1b) 135 °C/W θJA R Thermal Resistance, Junction to Case (Note 1) 40 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS8949 FDS8949 13’’ 12mm 2500 units ©2006 1 FDS8949 Rev. B1
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