FDS8874 , N-Channel PowerTrench MOSFET
FDS8874 , N-Channel PowerTrench MOSFET
FDS8876 ,30V N-Channel PowerTrench?MOSFETFeatures General Description r = 8.2mΩ, V = 10V, I = 12.5A This N-Channel MOSFET has been designe ..
FDS8878 ,N-Channel PowerTrench MOSFETFeatures General Description r = 14mΩ , V = 10V, I = 10.2A This N-Channel MOSFET has been designe ..
FDS8880 ,N-Channel PowerTrench MOSFETFeatures General Description
FDS8870
30V N-Channel PowerTrench MOSFET
® FDS8870 N-Channel PowerTrench MOSFET February 2005 FDS8870 ® N-Channel PowerTrench MOSFET 30V, 18A, 4.2mΩ Features General Description r = 4.2mΩ, V = 10V, I = 18A This N-Channel MOSFET has been designed specifically to DS(ON) GS D improve the overall efficiency of DC/DC converters using r = 4.9mΩ, V = 4.5V, I = 17A either synchronous or conventional switching PWM DS(ON) GS D controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low r and fast switching speed. DS(ON) r DS(ON) Low gate charge High power and current handling capability Applications DC/DC converters Branding Dash 5 4 6 3 5 1 7 2 2 3 4 8 1 SO-8 ©2005 1 FDS8870 Rev. A1
