FDS8840NZ ,40V N-Channel PowerTrench?MOSFETApplicationsDS(on) and fast switching Synchronous Buck for Vcore and Server High power and curren ..
FDS8858CZ ,30V Dual N & P-Channel PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise notedJSymbol Parameter Test Conditions Type Mi ..
FDS8870 ,30V N-Channel PowerTrench MOSFETFeatures General Description
FDS8840NZ
40V N-Channel PowerTrench?MOSFET
® FDS8840NZ N-Channel Power Trench MOSFET April 2009 FDS8840NZ ® N-Channel PowerTrench MOSFET 40 V, 18.6 A, 4.5 mΩ Features General Description Max r = 4.5 mΩ at V = 10 V, I = 18.6 A The FDS8840NZ has been designed to minimize losses in DS(on) GS D power conversion application. Advancements in both silicon and Max r = 6.0 mΩ at V = 4.5 V, I = 14.9 A DS(on) GS D package technologies have been combined to offer the lowest HBM ESD protection level of 6 kV typical(note 3) r while maintaining excellent switching performance. DS(on) High performance trench technology for extremely low r Applications DS(on) and fast switching Synchronous Buck for Vcore and Server High power and current handling capability Notebook Battery Pack Termination is Lead-free and RoHS Compliant Load Switch D D D G D D D S D S G SO-8 S D S S Pin 1 S MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous 18.6 I A D -Pulsed 63 E Single Pulse Avalanche Energy (Note 4) 600 mJ AS Power Dissipation T = 25 °C (Note 1a) 2.5 A P W D Power Dissipation T = 25 °C (Note 1b) 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS8840NZ FDS8840NZ SO8 13 ’’ 12 mm 2500 units 1 ©2009 FDS8840NZ Rev.C1
