FDS8672S General Description Max r = 4.8mΩ at V = 10V, I = 18A The FDS8672S is designed to replace a single ..
FDS8690 ,30V N-Channel PowerTrench?MOSFETFeatures Max r = 7.6mΩ, V = 10V, I = 14ADS(on) GS DThis N-Channel MOSFET has been designed specif ..
FDS8690 ,30V N-Channel PowerTrench?MOSFETApplications 100% R tested G Notebook CPU power supply RoHS Compliant Synchronous re ..
FDS8813NZ ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 4.5mΩ at V = 10V, I ..
FDS8813NZ ,30V N-Channel PowerTrench?MOSFETapplications common in Notebook Computers and High power and current handling capability Portable ..
FDS8817NZ ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 7mΩ at V = 10V, I = ..
FR305 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 3.0A
FR604 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FR606 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FR607 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FR804 , FAST RECOVERY GLASS PASSIVATED RECTIFIER (VOLTAGE RANGE 50 to 800 Volts CURRENT 8.0 Amperes)
FR805 , FAST RECOVERY GLASS PASSIVATED RECTIFIER (VOLTAGE RANGE 50 to 800 Volts CURRENT 8.0 Amperes)
FDS8672S
® ™ FDS8672S N-Channel PowerTrench SyncFET December 2007 FDS8672S tm ® ™ N-Channel PowerTrench SyncFET 30V, 18A, 4.8mΩ Features General Description Max r = 4.8mΩ at V = 10V, I = 18A The FDS8672S is designed to replace a single MOSFET and DS(on) GS D Schottky diode in synchronous DC/DC power supplies. This 30V Max r = 7.0mΩ at V = 4.5V, I = 15A DS(on) GS D MOSFET is designed to maximize power conversion efficiency, providing a low r and low gate charge. The FDS8672S DS(on) Includes SyncFET Schottky body diode includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic High performance trench technology for extremely low r DS(on) SyncFET technology. and fast switching Application High power and current handling capability Synchronous Rectifier for DC/DC Converters 100% R (Gate Resistance) tested g Notebook Vcore low side switch Termination is Lead-free and RoHS Compliant Point of load low side switch D D G 5 4 D D D 6 3 S D 7 D 2 S G SO-8 8 1 S D S S Pin 1 S MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous 18 I A D -Pulsed 80 E Single Pulse Avalanche Energy (Note 3) 216 mJ AS Power Dissipation T = 25°C (Note 1a) 2.5 A P W D Power Dissipation T = 25°C (Note 1b) 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS8672S FDS8672S SO8 13’’ 12mm 2500 units 1 ©2007 FDS8672S Rev.D2
