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FDS7760A_NLFSCN/a23450avaiN-Channel Logic Level PowerTrench MOSFET


FDS7760A_NL ,N-Channel Logic Level PowerTrench MOSFETapplications where low in-line power loss and fast switching are required. • High performance trenc ..
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FDS7760A_NL
N-Channel Logic Level PowerTrench MOSFET
FDS7760 A FDS7760A ® N- MOSFET This N-Channel Logic Level MOSFET is produced · 15 A, 30 V. R = 5.5 m W = 10 V GS using Fairchild Semiconductor’s advanced R = 8 m W @ V = 4.5 V. PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain · Low gate charge (37nC typical) superior switching performance. These devices are well suited for low voltage and · Fast switching speed. battery powered applications where low in-line power loss and fast switching are required. · High performance trench technology for extremely DS(ON) · High power and current handling capability. · DC/DC converter · Load switch · Motor drives D D54 D D63 72 G S 81 S SO-8S o T=25C unless otherwise noted A Ratings Units V Drain-Source Voltage V V -Source Voltage V ± I Drain Current – Continuous A D – Pulsed PD Power Dissipation for Single Operation ote 1a) W (Note 1c) 1 T, T Operating and Storage Junction Temperature Range -55 to +150 °C J Thermal Characteristics R Thermal Resistance, Junction-to-Ambient °C/W q R Thermal Resistance, Junction-to-Ambient (Note 1c) 50 (10 sec) °C/W q Thermal Resistance, Junction-to-Case R °C/W qJC Device Marking Reel Size Tape Width Quantity FDS7760A FDS7760A 12mm 2500 units FDS7760A Rev D (W) Ó2 200 13’’ Device Package Outlines and Ordering Information 30(Note 1) JA JA 50(Note 1a) STG 1.2 (Note 1b) 2.5(N 60 15(Note 1a) 20GSS Gate DSS 30 ParameterSymbol imum RatingsAbsolute Max Applications . low R GSDS(ON) DS(ON) @ V FeaturesGeneral Description Channel Logic Level PowerTrench January 2002
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