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FDS7296N3FAIRCHILDN/a5286avai30V N-Channel PowerTrench MOSFET


FDS7296N3 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET in the thermally enhanced• 15 A, 30 V R = 8 mΩ @ V = 10 VDS(ON) GSS ..
FDS7760A ,N-Channel Logic Level PowerTrench ?MOSFETFDS7760 A FDS7760 A ®N- MOSFET This N-Channel Logic Level MOSFET is produced • 15 A, 30 V . R ..
FDS7760A_NL ,N-Channel Logic Level PowerTrench MOSFETapplications where low in-line power loss and fast switching are required. • High performance trenc ..
FDS7764A ,30V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrench 200January FDS7764A T = 25°C unless otherwise noted A ..
FDS7764A_NL ,30V N-Channel PowerTrench MOSFETApplications • Synchronous rectifier • DC/DC converter DD5 4DD6 37 2GS8 1SSO-8S oAbsolute Maximu ..
FDS7764S ,30V N-Channel PowerTrench SyncFETFeatures The FDS7764S is designed to replace a single SO-8 • 13.5 A, 30 V. R = 7.5 mΩ @ V = 10 V D ..
FR155 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Amperes
FR158 , 1.5 Amp FAST RECOVERY Glass Passivated Rectifiers
FR1602 , CURRENT 16.0 Amperes VOLTAGE 50 to 1000 Volts
FR2024 , Dyad
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes


FDS7296N3
30V N-Channel PowerTrench MOSFET
FDS7296N3 September 2004 FDS7296N3     30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET in the thermally enhanced • 15 A, 30 V R = 8 mΩ @ V = 10 V DS(ON) GS SO8 FLMP package has been designed specifically to R = 11 mΩ @ V = 4.5 V DS(ON) GS improve the overall efficiency of DC/DC converters. Providing a balance of low R and Qg it is ideal for DS(ON) • High performance trench technology for extremely synchronous rectifier applications in both isolated and non-isolated topologies. It is also well suited for high low R DS(ON) and low side switch applications in Point of Load converters. • Optimized for low Qgd to enable fast switching and reduced CdV/dt gate coupling. Applications • SO-8 FLMP for enhanced thermal performance in an • Secondary side Synchronous rectifier industry-standard package outline. • Synchronous Buck VRM and POL Converters Bottom-side D NC Drain Contact D 5 4 NC D NC D NC 6 3 D 7 2 Bottomless G FLMP SO-8 G S SO-8 S S 8 1 S S SO-8 Pin 1 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 15 A D – Pulsed 60 Power Dissipation for Single Operation (Note 1a) 3.0 P W D (Note 1b) 1.5 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 0.5 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7296N3 FDS7296N3 13’’ 12mm 2500 units 2004 FDS7296N3 Rev C(W)
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