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FDS7088SN3FAIRN/a901avai30V N-Channel PowerTernch SyncFET


FDS7088SN3 ,30V N-Channel PowerTernch SyncFETFeatures The FDS7088SN3 is designed to replace a single SO-8 • 21 A, 30 V R = 4.0 mΩ @ V = 10 V D ..
FDS7096N3 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 14 A, 30 V R = 9 mΩ @ V = 10 V DS(ON) GSspec ..
FDS7098N3 ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • DC/DC converter • Fast switching • Pow ..
FDS7288N3 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET in the thermally enhanced • 20.5 A, 30 V R = 4.5 mΩ @ V = 10 V DS( ..
FDS7296N3 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET in the thermally enhanced• 15 A, 30 V R = 8 mΩ @ V = 10 VDS(ON) GSS ..
FDS7760A ,N-Channel Logic Level PowerTrench ?MOSFETFDS7760 A FDS7760 A ®N- MOSFET This N-Channel Logic Level MOSFET is produced • 15 A, 30 V . R ..
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FDS7088SN3
30V N-Channel PowerTernch SyncFET
FDS7088SN3 August 2004 FDS7088SN3  ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDS7088SN3 is designed to replace a single SO-8 • 21 A, 30 V R = 4.0 mΩ @ V = 10 V DS(ON) GS FLMP MOSFET and Schottky diode in synchronous R = 4.9 mΩ @ V = 4.5 V DS(ON) GS DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a • High performance trench technology for extremely low R and low gate charge. The FDS7088SN3 DS(ON) includes an integrated Schottky diode using Fairchild’s low R DS(ON) monolithic SyncFET technology. The performance of the FDS7088SN3 as the low-side switch in a • High power and current handling capability synchronous rectifier is close to the performance of the FDS7088N3 in parallel with a Schottky diode. • Fast switching Applications • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size • DC/DC converter • Motor drives Bottom-side Drain Contact 5 4 6 3 7 2 8 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 21 A D – Pulsed 60 Power Dissipation for Single Operation (Note 1a) 3.0 P W D (Note 1b) 1.7 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 0.5 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7088SN3 FDS7088SN3 13’’ 12mm 2500 units 2004 FDS7088SN3 Rev B (W)
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