FDS7066N3 ,30V N-Channel PowerTrench MOSFETFDS7066N3June 2002 FDS7066N3 30V N-Channel PowerTrench MOSFET
FDS7066N3 ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching ..
FDS7066N3 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 23 A, 30 V R = 5.5 mΩ @ V = 10 V DS(ON) GSspec ..
FDS7066N7 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 23 A, 30 V R = 4.5 mΩ @ V = 10 V DS(ON) GSspec ..
FDS7066SN3 ,30V N-Channel PowerTrench SyncFETFeatures The FDS7066SN3 is designed to replace a single SO-8 • 19 A, 30 V R = 5.5 mΩ @ V = 10 V D ..
FDS7079ZN3 ,30V P-Channel PowerTrench MOSFETApplications for this device include multi-cell battery • ESD rating: 4kV protection and charging, ..
FR102 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
FR103 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
FR105G , FAST RECOVERY GLASS PASSIVATED RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)
FR110 , 1.0 Amp FAST RECOVERY PLASTIC RECTIFIERS
FR11-0001 ,869-894 MHz,3-port DROP-IN citculator
FR11-0003 ,1805-1880 MHz,3-port DROP-IN citculator
FDS7066N3
30V N-Channel PowerTrench MOSFET
FDS7066N3 June 2002 FDS7066N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 23 A, 30 V R = 5.5 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 6.5 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely “low side” synchronous rectifier operation, providing an extremely low R in a small package. low R DS(ON) DS(ON) Applications • High power and current handling capability • Synchronous rectifier • Fast switching • DC/DC converter • Bottomless� SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side D NC Drain Contact D 5 4 NC D NC D NC 6 3 D 7 2 Bottomless G G S SO-8 S S 8 1 S S Pin 1 SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±16 V GSS I Drain Current – Continuous (Note 1a) 23 A D – Pulsed 60 Power Dissipation for Single Operation (Note 1a) 3.0 P W D (Note 1b) 1.7 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 0.5 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7066N3 FDS7066N3 13’’ 12mm 2500 units FDS7066N3 Rev B (W) 2002
