FDS7064N ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 16 A, 30 V R = 7.5 mΩ @ V = 4.5 V DS(ON) GSspe ..
FDS7064N7 ,30V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrenchJanuary 2002 FDS7064N7 T = 25°C unless otherwise noted ..
FDS7066ASN3 ,30V N-Channel PowerTrench SyncFETFeatures The FDS7066ASN3 is designed to replace a single SO-• 19 A, 30 V R = 4.8 mΩ @ V = 10 V DS ..
FDS7066N3 ,30V N-Channel PowerTrench MOSFETFDS7066N3June 2002 FDS7066N3 30V N-Channel PowerTrench MOSFET
FDS7066N3 ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching ..
FDS7066N3 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 23 A, 30 V R = 5.5 mΩ @ V = 10 V DS(ON) GSspec ..
FR102 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
FR103 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
FR105G , FAST RECOVERY GLASS PASSIVATED RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)
FR110 , 1.0 Amp FAST RECOVERY PLASTIC RECTIFIERS
FR11-0001 ,869-894 MHz,3-port DROP-IN citculator
FR11-0003 ,1805-1880 MHz,3-port DROP-IN citculator
FDS7064N
30V N-Channel PowerTrench MOSFET
FDS7064N June 2002 FDS7064N 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 16 A, 30 V R = 7.5 mΩ @ V = 4.5 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • High performance trench technology for extremely switching PWM controllers. It has been optimized for low R DS(ON) “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) • High power and current handling capability Applications • Fast switching • Synchronous rectifier • Bottomless� SO-8 package: Enhanced thermal • DC/DC converter performance in industry-standard package size Bottom-side D NC Drain Contact D 5 4 NC D NC D NC 6 3 D 7 2 Bottomless G G S SO-8 S S 8 1 S S Pin 1SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ± 12 I Drain Current – Continuous (Note 1a) 16 A D – Pulsed 60 P Power Dissipation for Single Operation (Note 1a) 3.0 W D T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 40 R °C/W θJA Thermal Resistance, Junction-to-Case 0.5 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7064N FDS7064N 13’’ 12mm 2500 units FDS7064N Rev C (W) 2002
