FDS7060N7 ,30V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrenchFebruary 2002 FDS7060N7 T = 25°C unless otherwise note ..
FDS7064A ,30V N-Channel PowerTrench MOSFETApplications• Fast switching• Synchronous rectifier• Bottomless
FDS7060N7
30V N-Channel PowerTrench MOSFET
FDS7060N7 FDS7060N7 Ò Ò 30V N- This N-Channel MOSFET has been designed · A, 30 V. R = 5 m W @ V = 10 V specifically to improve the overall efficiency of DC/DC R m W @ V = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for · High performance trench technology for extremely “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) · High power and current handling capability · Synchronous rectifier · Fast switching, low gate charge (35nC typical) · DC/DC converter · Bottomless ä-8 package: Enhanced thermal performance in industry-standard package size Bottom-side DDrain Contact DS54 DS DS 63 DS 72 G G S81 S S S SSO-8S o T=25C unless otherwise noted A Ratings Units V Drain-Source Voltage V V -Source Voltage ± V I Drain Current – Continuous A D – Pulsed P Power Dissipation for Single Operation 0 W D TJ, T Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient °C/W q R Thermal Resistance, Junction-to-Case °C/W qJC Device Marking Reel Size Tape width Quantity FDS7060N7 FDS7060N7 12mm 2500 units Ó2 200 (W)C Rev FDS7060N7 13’’ Device Package Marking and Ordering Information 0.5(Note 1) JA 40(Note 1a) STG 3.(Note 1a) 60 19(Note 1a) GSS 20Gate DSS 30 ParameterSymbol Absolute Maximum Ratings Pin 1 SO-8 Bottomless SO Applications low RDS(ON) GSDS(ON) = 7 GSDS(ON) 19 FeaturesGeneral Description MOSFETChannel PowerTrench February 2002
