FDS6986S_NL ,Dual Notebook Power Supply N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type ..
FDS6990 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETFDS6990S May 2001 FDS6990S Ò ™Dual 30V N-Channel PowerTrench SyncFET
FDS6990 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETApplications • High power and current handling capability• DC/DC converter • Motor drives D1D5 4D ..
FDS6990 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETFeatures The FDS6990S is designed to replace a dual SO-8 • 7.5A, 30 V. R = 22 mΩ @ V = 10 V DS(ON) ..
FDS6990A ,Dual N-Channel Logic Level PowerTrench TM TM MOSFETGeneral Description
FDS6990A. ,Dual N-Channel Logic Level PowerTrench TM TM MOSFETFeaturesThese N-Channel Logic Level MOSFETs are7.5 A, 30 V. R = 0.018 Ω @ V = 10 V DS(O ..
FQU17P06 ,60V P-Channel MOSFET
FQU1N60C ,600V N-Channel Advance QFET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 1A, 600V, R = 11.5Ω @V = 10 VDS(on) G ..
FQU1N60C ,600V N-Channel Advance QFET C-SeriesFQD1N60C / FQU1N60C®QFETFQD1N60C / FQU1N60C600V N-Channel MOSFET
FQU1N80 ,800V N-Channel MOSFET
FQU1N80 ,800V N-Channel MOSFET
FQU1N80TU ,Power MOSFETFQD1N80 / FQU1N80May 2001TMQFETFQD1N80 / FQU1N80800V N-Channel MOSFET
FDS6986S_NL
Dual Notebook Power Supply N-Channel PowerTrench SyncFET
FDS6986S 2 1 D /S D2/S1 D1 D1 G2 S2 G1 S1/D2 September 2002 FDS6986S ™ Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6986S is designed to replace two single SO-8 • Q2: Optimized to minimize conduction losses MOSFETs and Schottky diode in synchronous DC:DC Includes SyncFET Schottky body diode power supplies that provide various peripheral voltages 7.9A, 30V R = 20 mΩ @ V = 10V DS(on) GS for notebook computers and other battery powered electronic devices. FDS6986S contains two unique R = 28 mΩ @ V = 4.5V DS(on) GS 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. • Q1: Optimized for low switching losses Low gate charge (6.5 nC typical) The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low- 6.5A, 30V R = 29 mΩ @ V = 10V DS(on) GS side switch (Q2) is optimized to reduce conduction R = 38 mΩ @ V = 4.5V losses. Q2 also includes an integrated Schottky diode DS(on) GS using Fairchild’s monolithic SyncFET technology. Q2 5 4 D D D 6 3 D Q1 7 2 SO-8 G 8 1 S S Pin 1 SO-8 S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q2 Q1 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage V GSS ±20 ±16 I Drain Current - Continuous (Note 1a) 7.9 6.5 A D - Pulsed 30 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range -55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 40 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6986S FDS6986S 13” 12mm 2500 units FDS6986S Rev C1(W) 2002
