FDS6911 ,20V Dual N-Channel Logic Level PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
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FDS6911
20V Dual N-Channel Logic Level PowerTrench?MOSFET
® FDS6911 Dual N-Channel Logic level PowerTrench MOSFET December 2011 FDS6911 ® Dual N-Channel Logic Level PowerTrench MOSFET 20V, 7.5A, 13mΩ General Description Features These N-Channel Logic Level MOSFETs are produced r = 13 mΩ @ V = 10 V DS(on) GS using Fairchild Semiconductor’s advanced r = 17 mΩ @ V = 4.5 V DS(on) GS PowerTrench process that has been especially tailored Fast switching speed to minimize the on-state resistance and yet maintain superior switching performance. Low gate charge These devices are well suited for low voltage and High performance trench technology for extremely battery powered applications where low in-line power loss and fast switching are required. low R DS(ON) High power and current handling capability D2 D S1 8 D1 1 D2 Q1 D D1 D G1 D1 D1 2 7 D S2 D2 3 6 Q2 G2 SO-8 S2 G G2 4 5 D2 G1 S S1 S Pin 1 SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current – Continuous (Note 1a) 7.5 A D – Pulsed 20 P W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6911 FDS6911 13’’ 12mm 2500 units ©2011 FDS6911 Rev C1
