FDS6900S_NL ,Dual N-Channel PowerTrench SyncFETFeatures The FDS6900S is designed to replace two single SO-8 • Q2: Optimized to minimize conductio ..
FDS6910 ,30V Dual N-Channel Logic Level PowerTrench MOSFETFeatures These N-Channel Logic Level MOSFETs are produced • 7.5 A, 30 V. R = 13 mΩ @ V = 10 V DS(ON ..
FDS6910_NL ,30V Dual N-Channel Logic Level PowerTrench MOSFETFDS6910 September 2004 FDS6910 Dual N-Channel Logic Level PowerTrench MOSFET
FDS6911 ,20V Dual N-Channel Logic Level PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS6912 ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETFeaturesThese N-Channel Logic Level MOSFETs have been • 6 A, 30 V. R = 0.028 Ω @ V = 10 VDS(ON) GSd ..
FDS6912_NL ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETFeaturesThese N-Channel Logic Level MOSFETs have been • 6 A, 30 V. R = 0.028 Ω @ V = 10 VDS(ON) GSd ..
FQPF4N20 ,200V N-Channel MOSFET
FQPF4N20 ,200V N-Channel MOSFET
FQPF4N20L ,200V LOGIC N-Channel MOSFETFQPF4N20LDecember 2000TMQFET QFET QFET QFETFQPF4N20L200V LOGIC N-Channel MOSFET
FQPF4N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.0A, 200V, R = 1.35Ω @V = 10 VDS(on) ..
FQPF4N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.6A, 600V, R = 2.2Ω @V = 10 VDS(on) ..
FQPF4N60 ,600V N-Channel MOSFETApril 2000TMQFET QFET QFET QFETFQPF4N60600V N-Channel MOSFET
FDS6900S-FDS6900S_NL
Dual N-Channel PowerTrench SyncFET
FDS6900S January 2003 FDS6900S ™ Dual N-Ch PowerTrench SyncFet General Description Features The FDS6900S is designed to replace two single SO-8 • Q2: Optimized to minimize conduction losses MOSFETs and Schottky diode in synchronous DC:DC Includes SyncFET Schottky body diode power supplies that provide various peripheral voltages 8.2A, 30V R = 22mΩ @ V = 10V DS(on) GS for notebook computers and other battery powered electronic devices. FDS6900S contains two unique R = 29mΩ @ V = 4.5V DS(on) GS 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. • Q1: Optimized for low switching losses Low Gate Charge ( 8 nC typical) The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low- 6.9A, 30V R = 30mΩ @ V = 10V DS(on) GS side switch (Q2) is optimized to reduce conduction R = 37mΩ @ V = 4.5V losses. Q2 also includes an integrated Schottky diode DS(on) GS using Fairchild’s monolithic SyncFET technology. S1D2 1 8 D S1D2 D Q1 S1D2 2 7 D G1 D 3 6 Q2 4 5 S2 SO-8 G G2 S D1 Dual N-Channel SyncFet S D1 Pin 1 SO- S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q2 Q1 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage V GSS ±20 ±20 I Drain Current - Continuous (Note 1a) 8.2 6.9 A D - Pulsed 30 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 40 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6900S FDS6900S 13” 12mm 2500 units FDS6900S Rev C(W) 2003
