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FDS6692AFAIRCHILN/a3000avai30V N-Channel PowerTrench?MOSFET
FDS6692AFSCN/a207avai30V N-Channel PowerTrench?MOSFET
FDS6692AFAIRCHILDN/a1994avai30V N-Channel PowerTrench?MOSFET


FDS6692A ,30V N-Channel PowerTrench?MOSFET®FDS6692A N-Channel PowerTrench MOSFETJanuary 2010FDS6692A®N-Channel PowerTrench MOSFET 30V, 9A, 11 ..
FDS6692A ,30V N-Channel PowerTrench?MOSFETApplications„ DC/DC convertersDD 5 4DD 6 3 7 2GSS 8 1SO-8 S2010 Fairchild Semiconductor Corporation ..
FDS6692A ,30V N-Channel PowerTrench?MOSFETFeatures General Description„ R = 11.5mΩ, V = 10V, I = 9A This N-Channel MOSFET has been designed ..
FDS6694 ,30V N-Channel Fast Switching PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 12 A, 30 V. R = 11 mΩ @ V = 10 V DS(ON) GSspeci ..
FDS6694_NL ,30V N-Channel Fast Switching PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 12 A, 30 V. R = 11 mΩ @ V = 10 VDS(ON) GSspecific ..
FDS6699S ,30V N-Channel PowerTrench SyncFETGeneral Description 21 A, 30 V Max R = 3.6 mΩ @ V = 10 V The FDS6699S is designed to replace a sing ..
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FQPF12N60C. ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect  12A, 600V, R = 0.65Ω @V = 10 VDS(on) ..
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FDS6692A
30V N-Channel PowerTrench?MOSFET
® FDS6692A N-Channel PowerTrench MOSFET January 2010 FDS6692A ® N-Channel PowerTrench MOSFET 30V, 9A, 11.5mΩ Features General Description „ R = 11.5mΩ, V = 10V, I = 9A This N-Channel MOSFET has been designed specifically to DS(ON) GS D improve the overall efficiency of DC/DC converters using „ R = 14.5mΩ, V = 4.5V, I = 8.2A either synchronous or conventional switching PWM DS(ON) GS D controllers. It has been optimized for low gate charge, low „ High performance trench technology for extremely low R and fast switching speed. DS(ON) R DS(ON) „ Low gate charge „ High power and current handling capability „ RoHS Compliant Applications „ DC/DC converters D D 5 4 D D 6 3 7 2 G S S 8 1 SO-8 S ©2010 1 FDS6692A Rev. A2
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