FDS6692_NL ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 12 A, 30 V. R = 12 mΩ @ V = 10 V. DS(ON) GSspec ..
FDS6692A ,30V N-Channel PowerTrench?MOSFET®FDS6692A N-Channel PowerTrench MOSFETJanuary 2010FDS6692A®N-Channel PowerTrench MOSFET 30V, 9A, 11 ..
FDS6692A ,30V N-Channel PowerTrench?MOSFETApplications DC/DC convertersDD 5 4DD 6 3 7 2GSS 8 1SO-8 S2010 Fairchild Semiconductor Corporation ..
FDS6692A ,30V N-Channel PowerTrench?MOSFETFeatures General Description R = 11.5mΩ, V = 10V, I = 9A This N-Channel MOSFET has been designed ..
FDS6694 ,30V N-Channel Fast Switching PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 12 A, 30 V. R = 11 mΩ @ V = 10 V DS(ON) GSspeci ..
FDS6694_NL ,30V N-Channel Fast Switching PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 12 A, 30 V. R = 11 mΩ @ V = 10 VDS(ON) GSspecific ..
FQPF12N60 ,600V N-Channel MOSFET
FQPF12N60 ,600V N-Channel MOSFET
FQPF12N60C ,600V N-Channel Advance Q-FET C-SeriesFQP12N60C/FQPF12N60CTMQFETFQP12N60C/FQPF12N60C600V N-Channel MOSFET
FQPF12N60C. ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 12A, 600V, R = 0.65Ω @V = 10 VDS(on) ..
FQPF12N60CT ,600V N-Channel MOSFET
FQPF12N60CT ,600V N-Channel MOSFET
FDS6692_NL
30V N-Channel PowerTrench MOSFET
FDS6692 September 2003 FDS6692 Ò 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 12 A, 30 V. R = 12 mW @ V = 10 V. DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 14.5 mW @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for · High performance trench technology for extremely low gate charge, low R and fast switching speed. DS(ON) low R DS(ON) Applications · Low gate charge (18 nC typical) · DC/DC converter · High power and current handling capability D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ± 16 V GSS I Drain Current – Continuous (Note 1a) 12 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 °C T , T Operating and Storage Junction Temperature Range -55 to +175 J STG Thermal Characteristics R °C/W qJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W qJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6692 FDS6692 13’’ 12mm 2500 units Ó2003 FDS6692 Rev D (W)
