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FDS6690ASN/a1832avai30V N-Channel PowerTrench SyncFET


FDS6690AS ,30V N-Channel PowerTrench SyncFETFeatures The FDS6690AS is designed to replace a single SO-8 • 10 A, 30 V. R max= 12 mΩ @ V = 10 ..
FDS6690S ,30V N-Channel PowerTrench SyncFET TMFeaturesThe FDS6690S is designed to replace a single SO-8• 10 A, 30 V. R = 0.016 Ω @ V = 10 VDS(ON) ..
FDS6690S_NL ,30V N-Channel PowerTrench SyncFETApplications• High power and current handling capability• DC/DC converter• Motor drivesDD5 4DD6 37 ..
FDS6692 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 12 A, 30 V. R = 12 mΩ @ V = 10 V. DS(ON) GSspec ..
FDS6692_NL ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 12 A, 30 V. R = 12 mΩ @ V = 10 V. DS(ON) GSspec ..
FDS6692A ,30V N-Channel PowerTrench?MOSFET®FDS6692A N-Channel PowerTrench MOSFETJanuary 2010FDS6692A®N-Channel PowerTrench MOSFET 30V, 9A, 11 ..
FQPF10N60C ,600V N-Channel Advance Q-FET C-SeriesFQP10N60C/FQPF10N60CTMQFETFQP10N60C/FQPF10N60C600V N-Channel MOSFET
FQPF10N60C. ,600V N-Channel Advance Q-FET C-SeriesFQP10N60C/FQPF10N60CTMQFETFQP10N60C/FQPF10N60C600V N-Channel MOSFET
FQPF11N40 ,400V N-Channel MOSFET
FQPF11N40C ,400V N-Channel Advance QFET C-seriesFeaturesThese N-Channel enhancement mode power field effect • 10.5 A, 400V, R = 0.5 Ω @V = 10 VD ..
FQPF11N40C ,400V N-Channel Advance QFET C-seriesFeaturesThese N-Channel enhancement mode power field effect • 10.5 A, 400V, R = 0.5 Ω @V = 10 VD ..
FQPF11N50CF ,N-Channel QFET?FRFET?MOSFET 500V, 11A, 550m?


FDS6690AS
30V N-Channel PowerTrench SyncFET
FDS6690AS December 2004 FDS6690AS ® ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 • 10 A, 30 V. R max= 12 mΩ @ V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R max= 15 mΩ @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low • Includes SyncFET Schottky diode and low gate charge. The FDS6690AS R DS(ON) includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of • Low gate charge (16nC typical) the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the • High performance trench technology for extremely low FDS6690A in parallel with a Schottky diode. R DS(ON) Applications • High power and current handling capability • DC/DC converter • Low side notebooks D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) 10 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6690AS FDS6690AS 13’’ 12mm 2500 units FDS6690AS FDS6690AS_NL (Note 4) 13’’ 12mm 2500 units FDS6690AS Rev A(X) ©2004
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