FDS6690A_NL ,Single N-Channel, Logic Level, Power Trench MOSFETapplications where low in-line powerloss and fast switching are required.• High performance trench ..
FDS6690AS ,30V N-Channel PowerTrench SyncFETFeatures The FDS6690AS is designed to replace a single SO-8 • 10 A, 30 V. R max= 12 mΩ @ V = 10 ..
FDS6690S ,30V N-Channel PowerTrench SyncFET TMFeaturesThe FDS6690S is designed to replace a single SO-8• 10 A, 30 V. R = 0.016 Ω @ V = 10 VDS(ON) ..
FDS6690S_NL ,30V N-Channel PowerTrench SyncFETApplications• High power and current handling capability• DC/DC converter• Motor drivesDD5 4DD6 37 ..
FDS6692 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 12 A, 30 V. R = 12 mΩ @ V = 10 V. DS(ON) GSspec ..
FDS6692_NL ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 12 A, 30 V. R = 12 mΩ @ V = 10 V. DS(ON) GSspec ..
FQPF10N60C ,600V N-Channel Advance Q-FET C-SeriesFQP10N60C/FQPF10N60CTMQFETFQP10N60C/FQPF10N60C600V N-Channel MOSFET
FQPF10N60C. ,600V N-Channel Advance Q-FET C-SeriesFQP10N60C/FQPF10N60CTMQFETFQP10N60C/FQPF10N60C600V N-Channel MOSFET
FQPF11N40 ,400V N-Channel MOSFET
FQPF11N40C ,400V N-Channel Advance QFET C-seriesFeaturesThese N-Channel enhancement mode power field effect • 10.5 A, 400V, R = 0.5 Ω @V = 10 VD ..
FQPF11N40C ,400V N-Channel Advance QFET C-seriesFeaturesThese N-Channel enhancement mode power field effect • 10.5 A, 400V, R = 0.5 Ω @V = 10 VD ..
FQPF11N50CF ,N-Channel QFET?FRFET?MOSFET 500V, 11A, 550m?
FDS6690A_NL
Single N-Channel, Logic Level, Power Trench MOSFET
FDS6690A June 2003 FDS6690A Ò Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced · 11 A, 30 V. R = 12.5 mW @ V = 10 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 17.0 mW @ V = 4.5 V DS(ON) GS PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain · Fast switching speed superior switching performance. These devices are well suited for low voltage and · Low gate charge battery powered applications where low in-line power loss and fast switching are required. · High performance trench technology for extremely low R DS(ON) · High power and current handling capability DD 5 4 DD DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 11 A D – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W qJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 125 qJA Thermal Resistance, Junction-to-Case (Note 1) 25 R qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6690A FDS6690A 13’’ 12mm 2500 units Ó2003 FDS6690A Rev E (W)
