FDS6690_NL ,Single N-Channel Logic Level PWM Optimized PowerTrench MOSFETElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDS6690A ,Single N-Channel, Logic Level, PowerTrench MOSFETFeaturesDescriptionGeneral MOSFET-Channel, Logic Level, PowerTrenchSingle NDS6690O( TAV Vo oI C CΔ ..
FDS6690A_NL ,Single N-Channel, Logic Level, Power Trench MOSFETapplications where low in-line powerloss and fast switching are required.• High performance trench ..
FDS6690AS ,30V N-Channel PowerTrench SyncFETFeatures The FDS6690AS is designed to replace a single SO-8 • 10 A, 30 V. R max= 12 mΩ @ V = 10 ..
FDS6690S ,30V N-Channel PowerTrench SyncFET TMFeaturesThe FDS6690S is designed to replace a single SO-8• 10 A, 30 V. R = 0.016 Ω @ V = 10 VDS(ON) ..
FDS6690S_NL ,30V N-Channel PowerTrench SyncFETApplications• High power and current handling capability• DC/DC converter• Motor drivesDD5 4DD6 37 ..
FQP9N30 ,300V N-Channel MOSFET
FQP9N30 ,300V N-Channel MOSFET
FQPF10N20C ,200V N-Channel Advance Q-FET C-SeriesFQP10N20C/FQPF10N20CTMQFETFQP10N20C/FQPF10N20C200V N-Channel MOSFET
FQPF10N20C ,200V N-Channel Advance Q-FET C-SeriesFQP10N20C/FQPF10N20CTMQFETFQP10N20C/FQPF10N20C200V N-Channel MOSFET
FQPF10N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9.5A, 200V, R = 0.36Ω @V = 10 VDS(on) ..
FQPF10N60C ,600V N-Channel Advance Q-FET C-SeriesFQP10N60C/FQPF10N60CTMQFETFQP10N60C/FQPF10N60C600V N-Channel MOSFET
FDS6690_NL
Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET
January 2000 FDS6690 Single N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General Description Features 10 A, 30 V. R = 0.0135 W @ V = 10 V DS(ON) GS This N Channel Logic Level MOSFET has been designed R = 0.0200 W @ V = 4.5 V. specifically to improve the overall efficiency of DC/DC DS(ON) GS converters using either synchronous or conventional switching Optimized for use in switching DC/DC converters with PWM controllers. PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable R specifications. DS(ON) Very fast switching . The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with Low gate charge (Qg typ = 13 nC). higher overall efficiency. TM TM SOIC-16 SOT-23 SuperSOT -6 SuperSOT -8 SO-8 SOT-223 D 5 4 D D 6 3 D 2 7 G S 8 pin 1 S 1 SO-8 S o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter FDS6690 Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS Drain Current - Continuous (Note 1a) 10 A I D - Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W JA q R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W JC q © 1998 FDS6690 Rev.C FDS 6690
