FDS6688S ,30V N-Channel PowerTrench SyncFETFDS6688S March 2004 FDS6688S ™30V N-Channel PowerTrench SyncFET
FDS6688S ,30V N-Channel PowerTrench SyncFETFeatures The FDS6688S is designed to replace a single SO-8 • 16 A, 30 V. R = 6.0 mΩ @ V = 10 V DS( ..
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FDS6688S
30V N-Channel PowerTrench SyncFET
FDS6688S March 2004 FDS6688S ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDS6688S is designed to replace a single SO-8 • 16 A, 30 V. R = 6.0 mΩ @ V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R = 7.5 mΩ @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low • Includes SyncFET Schottky body diode R and low gate charge. The FDS6688S includes DS(ON) an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. • High performance trench technology for extremely low R and fast switching DS(ON) Applications • High power and current handling capability • DC/DC converter • Motor drives D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) 16 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +125 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6688S FDS6688S 13’’ 12mm 2500 units FDS6688S Rev C (W) 2004
