FDS6685 ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –8.8 A, –30 V R = 20 mΩ @ V = –10 V DS ..
FDS6688 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 16 A, 30 V. R = 6 mΩ @ V = 10 V DS(ON) GSspecif ..
FDS6688_NL ,30V N-Channel PowerTrench MOSFETApplicationslow RDS(ON)• DC/DC converter• High power and current handling capabilityDD 5 4DDDD6 3DD ..
FDS6688S ,30V N-Channel PowerTrench SyncFETFDS6688S March 2004 FDS6688S ™30V N-Channel PowerTrench SyncFET
FDS6688S ,30V N-Channel PowerTrench SyncFETFeatures The FDS6688S is designed to replace a single SO-8 • 16 A, 30 V. R = 6.0 mΩ @ V = 10 V DS( ..
FDS6689S ,30V N-Channel PowerTrench SyncFETApplications • High power and current handling capability • Synchronous Rectifier for DC/DC convert ..
FQP85N06 ,60V N-Channel MOSFET
FQP85N06 ,60V N-Channel MOSFET
FQP8N60C ,600V N-Channel Advance Q-FET C-SeriesFQP8N60C/FQPF8N60C®QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFET
FQP8N60C. ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, R = 1.2Ω @V = 10 VDS(on) ..
FQP8N80C ,800V N-Channel Advance Q-FET C-SeriesFQP8N80C/FQPF8N80CTMQFETFQP8N80C/FQPF8N80C800V N-Channel MOSFET
FQP8N80C ,800V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 8A, 800V, R = 1.55Ω @V = 10 VDS(on) G ..
FDS6685
30V P-Channel PowerTrench MOSFET
FDS6685 October 2001 FDS6685 Ò Ò 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of · –8.8 A, –30 V R = 20 mW @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench RDS(ON) = 35 mW @ V GS = –4.5 V process. It has been optimized for power management applications requiring a wide range of gave drive · Low gate charge (17nC typical) voltage ratings (4.5V – 25V). · Fast switching speed Applications · Power management · High performance trench technology for extremely low RDS(ON) · Load switch · Battery protection · High power and current handling capability DD 5 4 D D DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S Pin 1SO-8 S o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage ±25 V GSS ID Drain Current – Continuous (Note 1a) –8.8 A – Pulsed –50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RqJA °C/W R Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6685 FDS6685 13’’ 12mm 2500 units Ó2001 FDS6685 Rev D(W)
