FDS6681Z ,30 Volt P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is produced using Fairchild • –20 A, –30 V. R = 4.6 mΩ @ V = –10 V D ..
FDS6681Z ,30 Volt P-Channel PowerTrench MOSFETapplications common in Notebook low R DS(ON)Computers and Portable Battery Packs. • High power and ..
FDS6681Z ,30 Volt P-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
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FDS6681Z
30 Volt P-Channel PowerTrench MOSFET
FDS6681Z June 2005 FDS6681Z ® 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild • –20 A, –30 V. R = 4.6 mΩ @ V = –10 V DS(ON) GS ® Semiconductor’s advanced PowerTrench process that R = 6.5 mΩ @ V = –4.5 V DS(ON) GS has been especially tailored to minimize the on-state • Extended V range (–25V) for battery applications GSS resistance. • HBM ESD protection level of 8kV typical (note 3) This device is well suited for Power Management and • High performance trench technology for extremely load switching applications common in Notebook low R DS(ON) Computers and Portable Battery Packs. • High power and current handling capability • Termination is Lead-free and RoHS Compliant D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage ±25 V GSS I Drain Current – Continuous (Note 1a) –20 A D – Pulsed –105 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6681Z FDS6681Z 13’’ 12mm 2500 units FDS6681Z Rev B (W) ©2005
