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FDS6679AZ
-30V P-Channel PowerTrench?MOSFET
® FDS6679AZ P-Channel PowerTrench MOSFET March 2009 FDS6679AZ ® tm P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description Features This P-Channel MOSFET is producted using Fairchild Max r = 9.3mΩ at V = -10V, I = -13A DS(on) GS D Semiconductor’s advanced PowerTrench process that has Max r = 14.8mΩ at V = -4.5V, I = -11A been especially tailored to minimize the on-state DS(on) GS D resistance. Extended V range (-25V) for battery applications GS This device is well suited for Power Management and load HBM ESD protection level of 6kV typical (note 3) switching applications common in Notebook Computers and Portable Battery Packs. High performance trench technology for extremely low r DS(on) High power and current handing capability RoHS Compliant D D 5 4 D D 6 3 7 2 G S S 8 1 SO-8 S MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage ±25 V GS Drain Current -Continuous (Note 1a) -13 I A D -Pulsed -65 Power Dissipation for Single Operation (Note 1a) 2.5 P (Note 1b) 1.2 W D (Note 1c) 1.0 T , T Operating and Storage Temperature -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance , Junction to Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS6679AZ FDS6679AZ 13’’ 12mm 2500 units ©2009 1 FDS6679AZ Rev. B2
