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FDS6675BZFAIRCHICDN/a20000avai-30V P-Channel PowerTrench?MOSFET


FDS6675BZ ,-30V P-Channel PowerTrench?MOSFETFeatures„ Max r = 13mΩ at V = -10V, I = -11AThis P-Channel MOSFET is producted using Fairchild DS(o ..
FDS6676 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 14.5 A, 30 V. R = 7 mΩ @ V = 10 V DS(ON) GSspec ..
FDS6676_NL ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (45 nC typ) • DC/DC converter • High power and current handling cap ..
FDS6676AS ,30V N-Channel PowerTrench SyncFETGeneral Description 14.5 A, 30 V. R max= 6.0 mΩ @ V = 10 V The FDS6676AS is designed to replace a ..
FDS6676S ,30V N-Channel PowerTrench SyncFET TMFeatures The FDS6676S is designed to replace a single SO-8 • 14.5 A, 30 V. R typ 5.25 mΩ @ V = 10 ..
FDS6676S_NL ,30V N-Channel PowerTrench SyncFETApplications • High power and current handling capability• DC/DC converter • Motor drives DD5 4DD ..
FQP3N50C ,N-Channel QFET?MOSFETFeatures Description• 3 A, 500 V, R = 2.5 Ω @ V = 10 V These N-Channel enhancement mode power field ..
FQP3N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect  3.0A, 600V, R = 3.6Ω @V = 10 VDS(on) ..
FQP3N60C ,N-Channel QFET?MOSFET 600V,3A, 3.4?FeaturesThis N-Channel enhancement mode power MOSFET is ®produced using Fairchild Semiconductor ’s ..
FQP3N60C ,N-Channel QFET?MOSFET 600V,3A, 3.4?FQP3N60C N-Channel MOSFET March 2013FQP3N60C N-Channel QFET MOSFET 600 V, 3.0 A, 3.4 Ω Description
FQP3N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQP3N80800V N-Channel MOSFET
FQP3N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect  3.0A, 800V, R = 5.0Ω @V = 10 VDS(on) ..


FDS6675BZ
-30V P-Channel PowerTrench?MOSFET
® FDS6675BZ P-Channel PowerTrench MOSFET March 2009 FDS6675BZ ® tm P-Channel PowerTrench MOSFET -30V, -11A, 13mΩ General Description Features „ Max r = 13mΩ at V = -10V, I = -11A This P-Channel MOSFET is producted using Fairchild DS(on) GS D Semiconductor’s advanced PowerTrench process that has „ Max r = 21.8mΩ at V = -4.5V, I = -9A DS(on) GS D been especially tailored to minimize the on-state resistance. „ Extended V range (-25V) for battery applications GS This device is well suited for Power Management and load „ HBM ESD protection level of 5.4 KV typical (note 3) switching applications common in Notebook Computers and Portable Battery Packs. „ High performance trench technology for extremely low r DS(on) „ High power and current handing capability „ RoHS Compliant D D 5 4 D D 6 3 7 2 G S S 8 1 SO-8 S MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage ±25 V GS Drain Current -Continuous (Note 1a) -11 I A D -Pulsed -55 Power Dissipation for Single Operation (Note 1a) 2.5 P (Note 1b) 1.2 W D (Note 1c) 1.0 T , T Operating and Storage Temperature -55 to 150 °C J STG Thermal Characteristics R Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance , Junction to Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS6675BZ FDS6675BZ 13’’ 12mm 2500 units ©2009 1 FDS6675BZ Rev. B2
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