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FDS6612A_NL |FDS6612ANLFAIRCHILDN/a380avaiSingle N-Channel, Logic Level, Power Trench MOSFET


FDS6612A_NL ,Single N-Channel, Logic Level, Power Trench MOSFETFeaturesThis N-Channel Logic Level MOSFET is produced• 8.4 A, 30 V. R = 22 mΩ @ V = 10 VDS(ON) GSu ..
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FDS6612A_NL
Single N-Channel, Logic Level, Power Trench MOSFET
FDS6612A June 2003 FDS6612A Ò Single N-Channel, Logic-Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced · 8.4 A, 30 V. R = 22 mW @ V = 10 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 30 mW @ V = 4.5 V DS(ON) GS PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain · Fast switching speed superior switching performance. These devices are well suited for low voltage and · Low gate charge battery powered applications where low in-line power loss and fast switching are required. · High performance trench technology for extremely low R DS(ON) · High power and current handling capability DD 5 4 DD DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 8.4 A D – Pulsed 40 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W qJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 125 qJA Thermal Resistance, Junction-to-Case (Note 1) 25 R qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6612A FDS6612A 13’’ 12mm 2500 units Ó2003 FDS6612A Rev D (W)
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