FDS6572A ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel September 2001FDS6572A
FDS6574A ,20V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed 16 A, 20 V. R = 6 mΩ @ V = 4.5 V DS(ON) GSspecifi ..
FDS6574A_NL ,20V N-Channel PowerTrench MOSFETApplications • High performance trench technology for extremely • DC/DC converter low R DS(ON)• ..
FDS6575 ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P -Channel 2.5V specified MOSFET is a rugged • –10 A, –20 V. R = 13 mΩ @ V = –4.5 V D ..
FDS6575_NL ,Single P-Channel Logic Level PowerTrench MOSFETApplications low R DS(ON)• Power management • High current and power handling capability • Load sw ..
FDS6576 ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET is in a rugged –11 A, –20 V. R = 0.014 Ω @ V = –4.5 V ..
FQI7N80 ,800V N-Channel MOSFET
FQI85N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQI9N08LTU ,80V N-Channel Logic Level QFETapplications such as automotive, high• Low level gate drive requirments allowingefficiency switchin ..
FQI9N08TU ,80V N-Channel QFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor control ..
FQI9N50 ,500V N-Channel MOSFET
FQI9N50CTU ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 9 A, 500V, R = 0.8 Ω @V = 10 VDS(o ..
FDS6572A
20V N-Channel PowerTrench MOSFET
FDS6572A September 2001 FDS6572A Ò Ò 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 16 A, 20 V. R = 6 m W @ V = 4.5 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 8 m W @ V = 2.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for · Low gate charge (57 nC) low gate charge, low R and fast switching speed. DS( ON) · High performance trench technology for extremely Applications low R DS( ON) · DC/DC converter · High power and current handling capability D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage ±12 V GSS I Drain Current – Continuous (Note 1a) 16 A D – Pulsed 80 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6572A FDS6572A 13’’ 12mm 2500 units Ó2001 FDS6572A Rev C (W)
