FDS5690 ,60V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET is produced using Fairchild 7 A, 60 V. R = 0.028 Ω @ V = 10 VDS(on) ..
FDS5690_NL ,N-Channel PowerTrench MOSFETApplications High power and current handling capability.• DC/DC converter Motor drivesD54DD6 3D7 ..
FDS6064N3 ,20V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • DC/DC converter ..
FDS6064N7 ,20V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • DC/DC converter ..
FDS6162N3 ,20V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching ..
FDS6162N7 ,20V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching ..
FQD7P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -5.4A, -60V, R = 0.45Ω @V = -10 VDS(o ..
FQD7P06TM ,60V P-Channel QFETFQD7P06 / FQU7P06May 2001TMQFETFQD7P06 / FQU7P0660V P-Channel MOSFET
FQD7P20TM ,200V P-Channel QFET
FQD8N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 6.2A, 250V, R = 0.55Ω @V = 10 VDS(on) ..
FQD8N25TF ,250V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 6.2A, 250V, R = 0.55Ω @V = 10 VDS(on) ..
FQD8P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FDS5690
60V N-Channel PowerTrench MOSFET
FDS5690 FDS5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild . R7 A, 60 V = 0.028 Ω @ V = 10 V DS(on)GS Semiconductor's advanced PowerTrench process that R = 0.033 Ω @ V. = 6 V has been especially tailored to minimize on-state DS(on)GS resistance and yet maintain superior switching Low gate charge (23nC typical). powered applications where low in-line power loss and low R. Applications. • D 5 4 D D 6 3 D 7 2 G S 1 8 S SO-8 S T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage 60 V DSS V Gate-Source Voltage 20 V GSS ± I Drain Current - Continuous (Note 1a) 7A D - Pulsed 50 (Note 1a) P Power Dissipation for Single Operation 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics (Note 1a) R Thermal Resistance, Junction-to-Ambient 50 C/W JA ° θ (Note 1) R Thermal Resistance, Junction-to-Case 25 C/W JC ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS5690 FDS5690 13’’ 12mm 2500 units 2000 FDS5690 Rev. C Motor drives DC/DC converter High power and current handling capability DS(ON) fast switching are required. High performance trench technology for extremely These devices are well suited for low voltage and battery Fast switching speed. performance. March 2000
