IC Phoenix
 
Home ›  FF10 > FDS4935-FDS4935_NL,Dual 30V P-Channel PowerTrench MOSFET
FDS4935-FDS4935_NL Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
FDS4935FAIRCHILDN/a1038avaiDual 30V P-Channel PowerTrench MOSFET
FDS4935_NL |FDS4935NLFAIRCHILDN/a2avaiDual 30V P-Channel PowerTrench MOSFET


FDS4935 ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –7 A, –30 V R = 23 mΩ @ V = –10 V DS(O ..
FDS4935_NL ,Dual 30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low R DS(ON)• ..
FDS4935A ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –7 A, –30 V R = 23 mΩ @ V = –10 V DS(O ..
FDS4935A. ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –7 A, –30 V R = 23 mΩ @ V = –10 V DS(O ..
FDS4935A_NL ,Dual 30V P-Channel PowerTrench&#174 MOSFETApplications • Power management • High performance trench technology for extremely low R DS(ON)• ..
FDS4935BZ ,-30V Dual P-Channel PowerTrench?MOSFETFeaturesThis P-Channel MOSFET has been designed x –6.9 A, –30 V. R = 22 m: @ V = –10 V DS(ON) GSspe ..
Fqd4N50TM ,500V N-Channel QFET
FQD4N50TM ,500V N-Channel QFET
FQD4P25 ,250V P-Channel MOSFETFQD4P25 / FQU4P25December 2000TMQFET QFET QFET QFETFQD4P25 / FQU4P25250V P-Channel MOSFET
FQD4P40 ,400V P-Channel MOSFETAugust 2000TMQFET QFET QFET QFETFQD4P40 / FQU4P40400V P-Channel MOSFET
FQD4P40TM ,400V P-Channel QFETAugust 2000TMQFET QFET QFET QFETFQD4P40 / FQU4P40400V P-Channel MOSFET
FQD5N15 ,150V N-Channel MOSFET


FDS4935-FDS4935_NL
Dual 30V P-Channel PowerTrench MOSFET
FDS4935 June 2001 FDS4935     Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of • –7 A, –30 V R = 23 mΩ @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R = 35 mΩ @ V = –4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave drive • Low gate charge (15nC typical) voltage ratings (4.5V – 25V). • Fast switching speed Applications • Power management • High performance trench technology for extremely low R DS(ON) • Load switch • Battery protection • High power and current handling capability D1 D 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 SO-8 Q2 G S1 8 1 S G2 S S2 SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage V GSS ±25 I Drain Current – Continuous (Note 1a) –7 A D – Pulsed –30 P Power Dissipation for Dual Operation 2 D Power Dissipation for Single Operation (Note 1a) 1.6 P W D (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 40 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4935 FDS4935 13’’ 12mm 2500 units FDS4935 Rev B(W) 2003
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED