FDS4675 ,40V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –11 A, –40 V R = 0.013 Ω @ V = –10 V D ..
FDS4675_F085 ,-40V P-Channel PowerTrench?MOSFETApplications low R DS(ON)• Power management • High power and current handling capability • Load sw ..
FDS4675_NL ,40V P-Channel PowerTrench MOSFETApplications low R DS(ON)• Power management • High power and current handling capability • Load sw ..
FDS4685 ,40V P-Channel PowerTrench MOSFETGeneral DescriptionDS(ON) High power and current handling capabilityThis P-Channel MOSFET is a rugg ..
FDS4770 ,40V N-Channel PowerTrench MOSFETApplications • Fast switching, low gate charge • Synchronous rectifier • DC/DC converter DD5 4DDD ..
FDS4770 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FQD2N100 ,1000V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 1.6A, 1000V, R = 9Ω @V = 10 VDS(on) G ..
FQD2N100 ,1000V N-Channel MOSFETFQD2N100/FQU2N100February 2002FQD2N100/FQU2N1001000V N-Channel MOSFET
FQD2N100TM ,1000V N-Channel QFETFQD2N100/FQU2N100February 2002FQD2N100/FQU2N1001000V N-Channel MOSFET
FQD2N100TM ,1000V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 1.6A, 1000V, R = 9Ω @V = 10 VDS(on) G ..
FQD2N50 ,500V N-Channel MOSFET
FQD2N50 ,500V N-Channel MOSFET
FDS4675
40V P-Channel PowerTrench MOSFET
FDS4675 February 2001 FDS4675 Ò 40V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of · –11 A, –40 V R = 0.013 W @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench RDS(ON) = 0.017 W @ V GS = –4.5 V process. It has been optimized for power management applications requiring a wide range of gave drive · Fast switching speed voltage ratings (4.5V – 20V). · High performance trench technology for extremely Applications low R DS(ON) · Power management · High power and current handling capability · Load switch · Battery protection D D 5 4 D D DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S Pin 1 SO-8 S o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage V DSS –40 V Gate-Source Voltage ±20 V GSS ID Drain Current – Continuous (Note 1a) –11 A – Pulsed –50 P Power Dissipation for Single Operation (Note 1a) 2.4 (steady state) W D (Note 1b) 1.4 (Note 1c) 1.2 T , T Operating and Storage Junction Temperature Range -55 to +175 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 62.5 (steady state), 50 (10 sec) RqJA °C/W R Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4675 FDS4675 13’’ 12mm 2500 units Ó2001 FDS4675 Rev C(W)
