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FDS4559_NLFAIRCHILDN/a100avai60V Complementary PowerTrench MOSFET


FDS4559_NL ,60V Complementary PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type M ..
FDS4672A ,40V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 11 A, 40 V. R = 13 mΩ @ V = 4.5 V DS(ON) GSspec ..
FDS4672A_NL ,40V N-Channel PowerTrench MOSFETApplications • DC/DC converter • High power and current handling capability DD5 4DD6 37 2GS8 1SSO ..
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FDS4675_F085 ,-40V P-Channel PowerTrench?MOSFETApplications low R DS(ON)• Power management • High power and current handling capability • Load sw ..
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FQD1N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 1.0A, 800V, R = 20Ω @V = 10 VDS(on) G ..
FQD1N80 ,800V N-Channel MOSFETFQD1N80 / FQU1N80May 2001TMQFETFQD1N80 / FQU1N80800V N-Channel MOSFET
FQD1N80TM ,Power MOSFETFeaturesThese N-Channel enhancement mode power field effect • 1.0A, 800V, R = 20Ω @V = 10 VDS(on) G ..


FDS4559_NL
60V Complementary PowerTrench MOSFET
FDS4559 April 2002 FDS4559     60V Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using • Q1: N-Channel Fairchild’s advanced PowerTrench process that has 4.5 A, 60 V R = 55 mΩ @ V = 10V DS(on) GS been especially tailored to minimize the on-state resistance and yet maintain low gate charge for R = 75 mΩ @ V = 4.5V DS(on) GS superior switching performance. • Q2: P-Channel Applications –3.5 A, –60 V R = 105 mΩ @ V = –10V DS(on) GS • DC/DC converter R = 135 mΩ @ V = –4.5V DS(on) GS • Power management • LCD backlight inverter Q2 D2 D 5 4 D2 D D1 D 6 3 D1 D Q1 7 2 G2 SO-8 S2 G 8 1 G1 S S1 S Pin 1 SO-8 S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain-Source Voltage 60 –60 V DSS V Gate-Source Voltage V GSS ±20 ±20 I Drain Current - Continuous (Note 1a) 4.5 –3.5 A D - Pulsed 20 –20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range -55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 40 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4559 FDS4559 13” 12mm 2500 units FDS4559 Rev C1(W) 2000
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