FDS4072N3 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4080N3 ,40V N-Channel Bottomless TM PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4080N3 ,40V N-Channel Bottomless TM PowerTrench MOSFETApplications • Fast switching (Qg = 30 nC ) • Synchronous rectifier • DC/DC converter • Bottomless ..
FDS4080N7 ,40V N-Channel Bottomless PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4141 ,-40V P-Channel PowerTrench?MOSFETGeneral Description Max r = 13.0mΩ at V = -10V, I = -10.5A This P-Channel MOSFET has been produced ..
FDS4141 ,-40V P-Channel PowerTrench?MOSFETApplications Control switch in synchronous & non-synchronous buck Load switch InverterDDD 5 G4DD ..
FQB6N70TM ,700V N-Channel QFET
FQB6N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 5.8A, 800V, R = 1.95Ω @V = 10 VDS(on) ..
FQB6P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQB6P25TM ,250V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQB70N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQB70N08TM ,80V N-Channel QFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FDS4072N3
40V N-Channel PowerTrench MOSFET
FDS4072N3 June 2002 FDS4072N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 12.4 A, 40 V R = 12 mΩ @ V = 4.5 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 10 mΩ @ V = 10 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely “low side” synchronous rectifier operation, providing an extremely low R in a small package. low R DS(ON) DS(ON) Applications • High power and current handling capability • Synchronous rectifier • Fast switching • DC/DC converter • Bottomless� SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side D NC Drain Contact D 5 4 NC D NC D NC 6 3 D 7 2 Bottomless G G S SO-8 S S 8 1 S S Pin 1 SO-8 S o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 40 V DSS V Gate-Source Voltage ± 12 V GSS I Drain Current – Continuous (Note 1a) 12.4 A D – Pulsed 60 3.0 P Power Dissipation (Note 1a) W D 1.5 (Note 1b) T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 40 R °C/W θJA Thermal Resistance, Junction-to-Case 0.5 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4072N3 FDS4072N3 13’’ 12mm 2500 units FDS4072N3 Rev B (W) 2002
